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Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices

Journal Article · · IEEE Transactions on Power Electronics
This study presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist circuit consisting of two auxiliary transistors with two diodes is introduced to actively control gate voltages and gate loop impedances of both devices in a phase-leg configuration during different switching transients. Compared to conventional gate drives, the proposed circuit has the capability of accelerating the switching speed of the phase-leg power devices and suppressing the crosstalk to below device limits. Based on Wolfspeed 1200-V SiC MOSFETs, the test results demonstrate the effectiveness of this intelligent gate drive under varying operating conditions. More importantly, the proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.
Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1399114
Journal Information:
IEEE Transactions on Power Electronics, Journal Name: IEEE Transactions on Power Electronics Journal Issue: 12 Vol. 32; ISSN 0885-8993
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

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