Effective g factor of low-density two-dimensional holes in a Ge quantum well

Lu, T. M.; Harris, C. T.; Huang, S. -H.; Chuang, Y.; Li, J. -Y.; Liu, C. W.

doi:10.1063/1.4990569

Effective g factor of low-density two-dimensional holes in a Ge quantum well

Journal Article · Mon Sep 04 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4990569· OSTI ID:1398779

^[1]; Harris, C. T. ^[2]; Huang, S. -H. ^[3]; Chuang, Y. ^[3]; Li, J. -Y. ^[3]; Liu, C. W. ^[3]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
National Taiwan Univ., Taipei (Taiwan). Dept. of Electrical Engineering and Graduate Inst. of Electronic Engineering; National Nano Device Lab., Hsinchu (Taiwan)

Here we report the measurements of the effective g factor of low-density two-dimensional holes in a Ge quantum well. Using the temperature dependence of the Shubnikov-de Haas oscillations, we extract the effective g factor in a magnetic field perpendicular to the sample surface. Very large values of the effective g factor, ranging from ~13 to ~28, are observed in the density range of 1.4×10¹⁰ cm^-2– 1.4×10¹¹ cm^-2. When the magnetic field is oriented parallel to the sample surface, the effective g factor is obtained from a protrusion in the magneto-resistance data that signify full spin polarization. In the latter orientation, a small effective g factor, ~1.3-1.4, is measured in the density range of 1.5×10¹⁰ cm^-2–2×10¹⁰ cm^-2. Finally, this very strong anisotropy is consistent with theoretical predictions and previous measurements in other 2D hole systems, such as InGaAs and GaSb.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF); Ministry of Science and Technology

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1398779

Alternate ID(s):: OSTI ID: 1380047

Report Number(s):: SAND--2017-9871J; 656977

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 111; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Effective g factor of 2D holes in strained Ge quantum wells Drichko, I. L.; Dmitriev, A. A.; Malysh, V. A. Journal of Applied Physics, Vol. 123, Issue 16 https://doi.org/10.1063/1.5025413	journal	April 2018
Single and double hole quantum dots in strained Ge/SiGe quantum wells Hardy, Will J.; Harris, C. Thomas; Su, Yi-Hsin Nanotechnology, Vol. 30, Issue 21 https://doi.org/10.1088/1361-6528/ab061e	journal	March 2019
Effective g factor of 2D holes in strained Ge quantum wells Drichko, I. L.; Dmitriev, A. A.; Malysh, V. A. arXiv https://doi.org/10.48550/arxiv.1804.03876	text	January 2018
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