In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides

Fan, Zhi-Qiang; Jiang, Xiang-Wei; Luo, Jun-Wei; Jiao, Li-Ying; Huang, Ru; Li, Shu-Shen; Wang, Lin-Wang

doi:10.1103/PhysRevB.96.165402

Title: In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides

Journal Article · Mon Oct 02 00:00:00 EDT 2017 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.96.165402· OSTI ID:1395926

Fan, Zhi-Qiang; Jiang, Xiang-Wei; Luo, Jun-Wei; Jiao, Li-Ying; Huang, Ru; Li, Shu-Shen; Wang, Lin-Wang

View Accepted Manuscript (Publisher)

Cite

Export

Save

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1395926

Journal Information:: Physical Review B, Journal Name: Physical Review B Vol. 96 Journal Issue: 16; ISSN 2469-9950

Publisher:: American Physical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 108 works

Citation information provided by
Web of Science

References (37)

Molecular-Scale Electronics: From Concept to Function Xiang, Dong; Wang, Xiaolong; Jia, Chuancheng Chemical Reviews, Vol. 116, Issue 7 https://doi.org/10.1021/acs.chemrev.5b00680	journal	March 2016
Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors Kang, Jiahao; Liu, Wei; Sarkar, Deblina Physical Review X, Vol. 4, Issue 3 https://doi.org/10.1103/PhysRevX.4.031005	journal	July 2014
Nanomaterials in transistors: From high-performance to thin-film applications Franklin, A. D. Science, Vol. 349, Issue 6249 https://doi.org/10.1126/science.aab2750	journal	August 2015
Large and Tunable Photothermoelectric Effect in Single-Layer MoS ₂ Buscema, Michele; Barkelid, Maria; Zwiller, Val Nano Letters, Vol. 13, Issue 2 https://doi.org/10.1021/nl303321g	journal	January 2013
Controlled Synthesis of Highly Crystalline MoS ₂ Flakes by Chemical Vapor Deposition Wang, Xinsheng; Feng, Hongbin; Wu, Yongmin Journal of the American Chemical Society, Vol. 135, Issue 14 https://doi.org/10.1021/ja4013485	journal	March 2013
Improved Carrier Injection in Ultrathin-Body SOI Schottky-Barrier MOSFETs Zhang, M.; Knoch, J.; Appenzeller, Joerg IEEE Electron Device Letters, Vol. 28, Issue 3 https://doi.org/10.1109/LED.2007.891258	journal	March 2007
Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides Jiang, Xiang-Wei; Li, Shu-Shen Applied Physics Letters, Vol. 104, Issue 19 https://doi.org/10.1063/1.4878515	journal	May 2014
Spin filtering effect and magnetoresistance in zigzag 6, 6, 12-graphyne nanoribbon system Zhou, Yan-Hong; Zeng, Jing; Chen, Ke-Qiu Carbon, Vol. 76 https://doi.org/10.1016/j.carbon.2014.04.065	journal	September 2014
Probing the Dynamics of the Metallic-to-Semiconducting Structural Phase Transformation in MoS ₂ Crystals Guo, Yinsheng; Sun, Dezheng; Ouyang, Bin Nano Letters, Vol. 15, Issue 8 https://doi.org/10.1021/acs.nanolett.5b01196	journal	July 2015
Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers Duerloo, Karel-Alexander N.; Li, Yao; Reed, Evan J. Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms5214	journal	July 2014
Planar heterostructures of single-layer transition metal dichalcogenides: Composite structures, Schottky junctions, tunneling barriers, and half metals Aras, Mehmet; Kılıç, Çetin; Ciraci, S. Physical Review B, Vol. 95, Issue 7 https://doi.org/10.1103/PhysRevB.95.075434	journal	February 2017
Gate-Tunable Atomically Thin Lateral MoS ₂ Schottky Junction Patterned by Electron Beam Katagiri, Y.; Nakamura, T.; Ishii, A. Nano Letters, Vol. 16, Issue 6 https://doi.org/10.1021/acs.nanolett.6b01186	journal	May 2016
The electronic transport properties of transition-metal dichalcogenide lateral heterojunctions An, Yipeng; Zhang, Mengjun; Wu, Dapeng Journal of Materials Chemistry C, Vol. 4, Issue 46 https://doi.org/10.1039/C6TC04327E	journal	January 2016
Mechanically Controllable Break Junctions for Molecular Electronics Xiang, Dong; Jeong, Hyunhak; Lee, Takhee Advanced Materials, Vol. 25, Issue 35 https://doi.org/10.1002/adma.201301589	journal	August 2013
Stable, Single-Layer MX ₂ Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure Ataca, C.; Şahin, H.; Ciraci, S. The Journal of Physical Chemistry C, Vol. 116, Issue 16 https://doi.org/10.1021/jp212558p	journal	April 2012
Prediction of structural and metal-to-semiconductor phase transitions in nanoscale ${MoS}_{2}$ , ${WS}_{2}$ , and other transition metal dichalcogenide zigzag ribbons Güller, F.; Llois, A. M.; Goniakowski, J. Physical Review B, Vol. 91, Issue 7 https://doi.org/10.1103/PhysRevB.91.075407	journal	February 2015
Intrinsic region length scaling of heavily doped carbon nanotube p–i–n junctions Li, Zheng; Zheng, Jiaxin; Ni, Zeyuan Nanoscale, Vol. 5, Issue 15 https://doi.org/10.1039/c3nr01462b	journal	January 2013
2H → 1T phase transition and hydrogen evolution activity of MoS ₂ , MoSe ₂ , WS ₂ and WSe ₂ strongly depends on the MX ₂ composition Ambrosi, Adriano; Sofer, Zdeněk; Pumera, Martin Chemical Communications, Vol. 51, Issue 40 https://doi.org/10.1039/C5CC00803D	journal	January 2015
Controlling the Metal to Semiconductor Transition of MoS ₂ and WS ₂ in Solution Chou, Stanley S.; Huang, Yi-Kai; Kim, Jaemyung Journal of the American Chemical Society, Vol. 137, Issue 5 https://doi.org/10.1021/ja5107145	journal	January 2015
1H and 1T polymorphs, structural transitions and anomalous properties of (Mo,W)(S,Se) ₂ monolayers: first-principles analysis Singh, Anjali; Shirodkar, Sharmila N.; Waghmare, Umesh V. 2D Materials, Vol. 2, Issue 3 https://doi.org/10.1088/2053-1583/2/3/035013	journal	August 2015
On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs Knoch, J.; Mantl, S. IEEE Transactions on Electron Devices, Vol. 53, Issue 7 https://doi.org/10.1109/TED.2006.877262	journal	July 2006
Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor Mak, Kin Fai; Lee, Changgu; Hone, James Physical Review Letters, Vol. 105, Issue 13, Article No.136805 https://doi.org/10.1103/PhysRevLett.105.136805	journal	September 2010
Orbital analysis of electronic structure and phonon dispersion in MoS $_{2}$ , MoSe $_{2}$ , WS $_{2}$ , and WSe $_{2}$ monolayers under strain Chang, Chung-Huai; Fan, Xiaofeng; Lin, Shi-Hsin Physical Review B, Vol. 88, Issue 19 https://doi.org/10.1103/PhysRevB.88.195420	journal	November 2013
Generalized many-channel conductance formula with application to small rings Büttiker, M.; Imry, Y.; Landauer, R. Physical Review B, Vol. 31, Issue 10 https://doi.org/10.1103/PhysRevB.31.6207	journal	May 1985
Ab initio simulation of single- and few-layer ${MoS}_{2}$ transistors: Effect of electron-phonon scattering Szabó, Áron; Rhyner, Reto; Luisier, Mathieu Physical Review B, Vol. 92, Issue 3 https://doi.org/10.1103/PhysRevB.92.035435	journal	July 2015
Phonon wave interference in graphene and boron nitride superlattice Chen, Xue-Kun; Xie, Zhong-Xiang; Zhou, Wu-Xing Applied Physics Letters, Vol. 109, Issue 2 https://doi.org/10.1063/1.4958688	journal	July 2016
Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects Jiang, Xiang-Wei; Gong, Jian; Xu, Nuo Applied Physics Letters, Vol. 104, Issue 2 https://doi.org/10.1063/1.4862667	journal	January 2014
Does p-type ohmic contact exist in WSe ₂ –metal interfaces? Wang, Yangyang; Yang, Ruo Xi; Quhe, Ruge Nanoscale, Vol. 8, Issue 2 https://doi.org/10.1039/C5NR06204G	journal	January 2016
Phase-engineered low-resistance contacts for ultrathin MoS₂ transistors Kappera, Rajesh; Voiry, Damien; Yalcin, Sibel Ebru Nature Materials, Vol. 13, Issue 12, p. 1128-1134 https://doi.org/10.1038/nmat4080	journal	August 2014
Chemically exfoliated single-layer ${MoS}_{2}$ : Stability, lattice dynamics, and catalytic adsorption from first principles Calandra, Matteo Physical Review B, Vol. 88, Issue 24 https://doi.org/10.1103/PhysRevB.88.245428	journal	December 2013
Density-functional method for nonequilibrium electron transport Brandbyge, Mads; Mozos, José-Luis; Ordejón, Pablo Physical Review B, Vol. 65, Issue 16, Article No. 165401 https://doi.org/10.1103/PhysRevB.65.165401	journal	March 2002
A first-principles examination of conducting monolayer 1T′-MX ₂ (M = Mo, W; X = S, Se, Te): promising catalysts for hydrogen evolution reaction and its enhancement by strain Putungan, Darwin Barayang; Lin, Shi-Hsin; Kuo, Jer-Lai Physical Chemistry Chemical Physics, Vol. 17, Issue 33 https://doi.org/10.1039/C5CP03799A	journal	January 2015
Phase stability of transition metal dichalcogenide by competing ligand field stabilization and charge density wave K. C., Santosh; Zhang, Chenxi; Hong, Suklyun 2D Materials, Vol. 2, Issue 3 https://doi.org/10.1088/2053-1583/2/3/035019	journal	September 2015
Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier Liu, Yuanyue; Stradins, Paul; Wei, Su-Huai Science Advances, Vol. 2, Issue 4 https://doi.org/10.1126/sciadv.1600069	journal	April 2016
High Performance Multilayer MoS₂Transistors with Scandium Contacts Das, Saptarshi; Chen, Hong-Yan; Penumatcha, Ashish Verma Nano Letters, Vol. 13, Issue 1, p. 100-105 https://doi.org/10.1021/nl303583v	journal	December 2012
A new (2 × 1) dimerized structure of monolayer 1T-molybdenum disulfide, studied from first principles calculations Hu, Ting; Li, Rui; Dong, Jinming The Journal of Chemical Physics, Vol. 139, Issue 17 https://doi.org/10.1063/1.4827082	journal	November 2013
Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe ₂ and Applications for Devices Ma, Yuqiang; Liu, Bilu; Zhang, Anyi ACS Nano, Vol. 9, Issue 7 https://doi.org/10.1021/acsnano.5b02399	journal	June 2015

Similar Records

Ballistic performance comparison of monolayer transition metal dichalcogenide MX{sub 2} (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors

Journal Article · Fri Feb 28 00:00:00 EST 2014 · Journal of Applied Physics · OSTI ID:1395926

Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.

Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer

Journal Article · Mon Sep 04 00:00:00 EDT 2023 · Nature Nanotechnology · OSTI ID:1395926

Mondal, Ashok; Biswas, Chandan; Park, Sehwan; +6 more

Gate-modulated conductance of few-layer WSe{sub 2} field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Journal Article · Mon Apr 13 00:00:00 EDT 2015 · Applied Physics Letters · OSTI ID:1395926

Wang, Junjie; Feng, Simin; Rhodes, Daniel; +6 more

Title: In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides

Citation Formats

References (37)

Similar Records

Related Subjects