Suppression of Current Collapse in Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors
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journal
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January 2016 |
Oxidation and the origin of the two-dimensional electron gas in AlGaN/GaN heterostructures
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journal
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June 2010 |
Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation
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journal
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June 2013 |
Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO
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conference
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January 2011 |
Gallium Nitride Studied by Electron Spectroscopy
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journal
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January 1980 |
Band Alignment and Performance Improvement Mechanisms of Chlorine-Treated ZnO-Gate AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors
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journal
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November 2011 |
Electronic surface and dielectric interface states on GaN and AlGaN
- Eller, Brianna S.; Yang, Jialing; Nemanich, Robert J.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 31, Issue 5
https://doi.org/10.1116/1.4807904
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journal
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September 2013 |
Investigation of Surface Band Bending of Ga-Face GaN by Angle-Resolved X-ray Photoelectron Spectroscopy
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journal
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January 2016 |
Measurement of the band offsets of SiO2 on clean n - and p -type GaN(0001)
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journal
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April 2003 |
Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application
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journal
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February 2012 |
Challenges for energy efficient wide band gap semiconductor power devices: Energy efficient wide band gap semiconductor power devices
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journal
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May 2014 |
Measurement of AlN/GaN (0001) heterojunction band offsets by x‐ray photoemission spectroscopy
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journal
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May 1996 |
Distribution of donor states on etched surface of AlGaN/GaN heterostructures
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journal
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September 2010 |
Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs
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journal
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February 2016 |
Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures
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journal
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November 2010 |
Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices
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journal
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February 2015 |
Band offset measurements of the GaN (0001)/HfO2 interface
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journal
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December 2003 |
Characterization of plasma-enhanced atomic layer deposition of Al 2 O 3 using dimethylaluminum isopropoxide
- Yang, Jialing; Eller, Brianna S.; Kaur, Manpuneet
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 32, Issue 2
https://doi.org/10.1116/1.4866378
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journal
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March 2014 |
Band offsets of wide-band-gap oxides and implications for future electronic devices
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journal
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January 2000 |
Empirical tight‐binding calculation of the branch‐point energy of the continuum of interface‐induced gap states
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November 1996 |
Relations between the Refractive Index and Energy Gap of Semiconductors
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journal
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October 1985 |
Electron band bending of polar, semipolar and non-polar GaN surfaces
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journal
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March 2016 |
Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN
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journal
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June 2003 |
Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States
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journal
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September 2014 |
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
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journal
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June 2005 |
Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers
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journal
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May 2016 |
Improved linearity and reliability in GaN metal–oxide–semiconductor high-electron-mobility transistors using nanolaminate La 2 O 3 /SiO 2 gate dielectric
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journal
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March 2016 |
Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
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journal
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September 2014 |
Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride
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journal
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September 2012 |
High-Quality Thin SiO 2 Films Grown by Atomic Layer Deposition Using Tris(dimethylamino)silane (TDMAS) and Ozone
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journal
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January 2013 |
Valence‐band discontinuity between GaN and AlN measured by x‐ray photoemission spectroscopy
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journal
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August 1994 |
Band offsets of high K gate oxides on III-V semiconductors
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journal
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July 2006 |
Band bending and photoemission-induced surface photovoltages on clean n - and p -GaN (0001) surfaces
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journal
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September 2002 |
The fundamental surface science of wurtzite gallium nitride
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journal
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September 2017 |
Atomic Layer Deposition of $\hbox{SiO}_{2}$ for AlGaN/GaN MOS-HFETs
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journal
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September 2012 |
Improved package reliability of AlGaN/GaN HFETs on 150mm Si substrates by SiNx/polyimide dual passivation layers
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journal
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December 2016 |
A study on the Moss relation
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journal
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August 1995 |