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Low temperature atomic layer deposition of highly photoactive hematite using iron(iii) chloride and water

Journal Article · · Journal of Materials Chemistry. A
DOI:https://doi.org/10.1039/c3ta12514a· OSTI ID:1395080

Nanostructured hematite (α-Fe2O3) has been widely studied for use in a variety of thin film applications including solar energy conversion, water oxidation, catalysis, lithium-ion batteries, and gas sensing. Among established deposition methods, atomic layer deposition (ALD) is a leading technique for controlled synthesis of a wide range of nanostructured materials. In this work, ALD of Fe2O3 is demonstrated using FeCl3 and H2O precursors at growth temperatures between 200 and 350 °C. Self-limiting growth of Fe2O3 is demonstrated with a growth rate of ~0.6 Å per cycle. As-deposited, films are nanocrystalline with low chlorine impurities and a mixture of α- and γ-Fe2O3. Post-deposition annealing in O2 leads to phase-pure α-Fe2O3 with increased out-of-plane grain size. Photoelectrochemical measurements under simulated solar illumination reveal high photoactivity toward water oxidation in both as-deposited and post-annealed films. Planar films deposited at low temperature (235 °C) exhibit remarkably high photocurrent densities ~0.71 mA cm-2 at 1.53 V vs. the reversible hydrogen electrode (RHE) without further processing. Films annealed in air at 500 °C show current densities of up to 0.84 mA cm-2 (1.53 V vs. RHE).

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science - Office of Basic Energy Sciences; USDOE Office of Science - Office of High Energy Physics
DOE Contract Number:
AC02-06CH11357
OSTI ID:
1395080
Journal Information:
Journal of Materials Chemistry. A, Journal Name: Journal of Materials Chemistry. A Journal Issue: 38 Vol. 1; ISSN JMCAET; ISSN 2050-7488
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English

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  • Martinson, Alex B. F.; DeVries, Michael J.; Libera, Joseph A.
  • The Journal of Physical Chemistry C, Vol. 115, Issue 10, p. 4333-4339 https://doi.org/10.1021/jp110203x
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