15.3%-Efficient GaAsP Solar Cells on GaP/Si Templates

Vaisman, Michelle; Fan, Shizhao; Nay Yaung, Kevin; Perl, Emmett; Martín-Martín, Diego; Yu, Zhengshan J.; Leilaeioun, Mehdi; Holman, Zachary C.; Lee, Minjoo L.

doi:10.1021/acsenergylett.7b00538

Title: 15.3%-Efficient GaAsP Solar Cells on GaP/Si Templates

Journal Article · Wed Jul 26 00:00:00 EDT 2017 · ACS Energy Letters

DOI:https://doi.org/10.1021/acsenergylett.7b00538· OSTI ID:1394745

^[1]; Fan, Shizhao ^[2]; Nay Yaung, Kevin ^[3]; Perl, Emmett ^[4]; Martín-Martín, Diego ^[5]; Yu, Zhengshan J. ^[6]; Leilaeioun, Mehdi ^[7]; Holman, Zachary C. ^[6]; Lee, Minjoo L. ^[2]

Yale Univ., New Haven, CT (United States). Dept. of Electrical Engineering; National Renewable Energy Lab. (NREL), Golden, CO (United States)
Univ. of Illinois, Urbana-Champaign, IL (United States). Dept. of Electrical and Computer Engineering
Yale Univ., New Haven, CT (United States). Dept. of Electrical Engineering
National Renewable Energy Lab. (NREL), Golden, CO (United States)
King Juan Carlos Univ., Madrid (Spain). Dept. of Electrical Technology
Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer and Energy Engineering
School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, United States

As single-junction Si solar cells approach their practical efficiency limits, a new pathway is necessary to increase efficiency in order to realize more cost-effective photovoltaics. Integrating III-V cells onto Si in a multijunction architecture is a promising approach that can achieve high efficiency while leveraging the infrastructure already in place for Si and III-V technology. In this Letter, we demonstrate a record 15.3%-efficient 1.7 eV GaAsP top cell on GaP/Si, enabled by recent advances in material quality in conjunction with an improved device design and a high-performance antireflection coating. Furthermore, we present a separate Si bottom cell with a 1.7 eV GaAsP optical filter to absorb most of the visible light with an efficiency of 6.3%, showing the feasibility of monolithic III-V/Si tandems with >20% efficiency. Through spectral efficiency analysis, we also compare our results to previously published GaAsP and Si devices, projecting tandem GaAsP/Si efficiencies of up to 25.6% based on current state-of-the-art individual subcells. With the aid of modeling, we further illustrate a realistic path toward 30% GaAsP/Si tandems for high-efficiency, monolithically integrated photovoltaics.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE); National Science Foundation (NSF)

Grant/Contract Number:: AC36-08GO28308; DMR-1119826

OSTI ID:: 1394745

Report Number(s):: NREL/JA-5J00-70182

Journal Information:: ACS Energy Letters, Vol. 2, Issue 8; ISSN 2380-8195

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 37 works

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