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Title: Origin of colossal dielectric permittivity of rutile Ti0.9In0.05Nb0.05O2: single crystal and polycrystalline

Journal Article · · Scientific Reports
DOI:https://doi.org/10.1038/srep21478· OSTI ID:1393428
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2]
  1. Harbin Inst. of Technology (China). Dept. of Physics
  2. Univ. of Wyoming, Laramie, WY (United States). Dept. of Physics & Astronomy

Here in this article, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 104, dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In+Nb) co-doped rutile TiO2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, and that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles.

Research Organization:
Univ. of Wyoming, Laramie, WY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Natural Science Foundation of China (NSFC)
Grant/Contract Number:
FG02-10ER46728; SC0004981
OSTI ID:
1393428
Journal Information:
Scientific Reports, Vol. 6, Issue 1; ISSN 2045-2322
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 84 works
Citation information provided by
Web of Science

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Dielectric properties of (Yb0.5Ta 0.5)xTi1−xO2 ceramics with colossal permittivity and low dielectric loss journal January 2020
Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO2 single crystals journal July 2017
Crystalline Structure, Defect Chemistry and Room Temperature Colossal Permittivity of Nd-doped Barium Titanate journal February 2017
Effects of DC bias on non-ohmic sample-electrode contact and grain boundary responses in giant-permittivity La 1.7 Sr 0.3 Ni 1−x Mg x O 4 ceramics journal January 2016
Colossal permittivity of (Mg + Nb) co-doped TiO 2 ceramics with low dielectric loss journal January 2017
The effect of segregation structure on the colossal permittivity properties of (La 0.5 Nb 0.5 ) x Ti 1−x O 2 ceramics journal January 2018
Colossal dielectric permittivity in Co-doped ZnO ceramics prepared by a pressure-less sintering method journal January 2018
Approaching subthreshold-swing limit for thin-film transistors by using a giant-dielectric-constant gate dielectric journal January 2019
Electron-pinned defect dipoles in (Li, Al) co-doped ZnO ceramics with colossal dielectric permittivity journal January 2020
Role of trivalent acceptors and pentavalent donors in colossal permittivity of titanium dioxide ceramics journal January 2019
Surface barrier layer effect in (In + Nb) co-doped TiO 2 ceramics: An alternative route to design low dielectric loss journal January 2017
Niobium and divalent-modified titanium dioxide ceramics: Colossal permittivity and composition design journal April 2017
Low‐temperature Maxwell‐Wagner relaxation in (Na + Nb) co‐doped rutile TiO 2 colossal permittivity ceramics journal October 2019
Influence of Zr dopant on polarization in rutile (In 0.5 Nb 0.5 ) 0.005 (Ti 1‐ x Zr x ) 0.995 O 2 ceramics journal October 2019
Colossal permittivity behavior and its origin in rutile (Mg1/3Ta2/3)xTi1-xO2 journal August 2017