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Title: Origin of colossal dielectric permittivity of rutile Ti 0.9In 0.05Nb 0.05O 2: single crystal and polycrystalline

Abstract

Here in this article, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO 2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 10 4, dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In+Nb) co-doped rutile TiO 2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, and that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2]
  1. Harbin Inst. of Technology (China). Dept. of Physics
  2. Univ. of Wyoming, Laramie, WY (United States). Dept. of Physics & Astronomy
Publication Date:
Research Org.:
Univ. of Wyoming, Laramie, WY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Natural Science Foundation of China (NNSFC)
OSTI Identifier:
1393428
Grant/Contract Number:  
FG02-10ER46728; SC0004981
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Song, Yongli, Wang, Xianjie, Sui, Yu, Liu, Ziyi, Zhang, Yu, Zhan, Hongsheng, Song, Bingqian, Liu, Zhiguo, Lv, Zhe, Tao, Lei, and Tang, Jinke. Origin of colossal dielectric permittivity of rutile Ti0.9In0.05Nb0.05O2: single crystal and polycrystalline. United States: N. p., 2016. Web. doi:10.1038/srep21478.
Song, Yongli, Wang, Xianjie, Sui, Yu, Liu, Ziyi, Zhang, Yu, Zhan, Hongsheng, Song, Bingqian, Liu, Zhiguo, Lv, Zhe, Tao, Lei, & Tang, Jinke. Origin of colossal dielectric permittivity of rutile Ti0.9In0.05Nb0.05O2: single crystal and polycrystalline. United States. doi:10.1038/srep21478.
Song, Yongli, Wang, Xianjie, Sui, Yu, Liu, Ziyi, Zhang, Yu, Zhan, Hongsheng, Song, Bingqian, Liu, Zhiguo, Lv, Zhe, Tao, Lei, and Tang, Jinke. Fri . "Origin of colossal dielectric permittivity of rutile Ti0.9In0.05Nb0.05O2: single crystal and polycrystalline". United States. doi:10.1038/srep21478. https://www.osti.gov/servlets/purl/1393428.
@article{osti_1393428,
title = {Origin of colossal dielectric permittivity of rutile Ti0.9In0.05Nb0.05O2: single crystal and polycrystalline},
author = {Song, Yongli and Wang, Xianjie and Sui, Yu and Liu, Ziyi and Zhang, Yu and Zhan, Hongsheng and Song, Bingqian and Liu, Zhiguo and Lv, Zhe and Tao, Lei and Tang, Jinke},
abstractNote = {Here in this article, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 104, dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In+Nb) co-doped rutile TiO2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, and that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles.},
doi = {10.1038/srep21478},
journal = {Scientific Reports},
issn = {2045-2322},
number = 1,
volume = 6,
place = {United States},
year = {2016},
month = {2}
}

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Cited by: 33 works
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Works referenced in this record:

CaCu3Ti4O12: One-step internal barrier layer capacitor
journal, March 2002

  • Sinclair, Derek C.; Adams, Timothy B.; Morrison, Finlay D.
  • Applied Physics Letters, Vol. 80, Issue 12, p. 2153-2155
  • DOI: 10.1063/1.1463211