Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics

Jariwala, Deep; Davoyan, Artur R.; Tagliabue, Giulia; Sherrott, Michelle C.; Wong, Joeson; Atwater, Harry A.

doi:10.1021/acs.nanolett.6b01914

Title: Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics

Journal Article · Fri Aug 26 00:00:00 EDT 2016 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.6b01914· OSTI ID:1388841

Jariwala, Deep ^[1]; Davoyan, Artur R. ^[1]; Tagliabue, Giulia ^[1]; Sherrott, Michelle C. ^[1]; Wong, Joeson ^[1]; Atwater, Harry A. ^[1]

California Inst. of Technology (CalTech), Pasadena, CA (United States)

In this work we demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Light-Material Interactions in Energy Conversion (LMI)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Swiss National Science Foundation (SNSF); National Science Foundation (NSF)

Grant/Contract Number:: SC0001293; P2EZP2_159101; 1144469

OSTI ID:: 1388841

Journal Information:: Nano Letters, Vol. 16, Issue 9; Related Information: LMI partners with California Institute of Technology (lead); Harvard University; University of Illinois, Urbana-Champaign; Lawrence Berkeley National Laboratory; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 128 works

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36 MATERIALS SCIENCE
transition metal dichalcogenides
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light trapping
broadband
near-unity absorption
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Title: Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics

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