Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics
- California Inst. of Technology (CalTech), Pasadena, CA (United States)
In this work we demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). Light-Material Interactions in Energy Conversion (LMI)
- Sponsoring Organization:
- National Science Foundation (NSF); Swiss National Science Foundation; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- SC0001293
- OSTI ID:
- 1388841
- Journal Information:
- Nano Letters, Journal Name: Nano Letters Journal Issue: 9 Vol. 16; ISSN 1530-6984
- Publisher:
- American Chemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
broadband
electrodes - solar
heterostructures
light trapping
materials and chemistry by design
near-unity absorption
optics
phonons
photovoltaics
solar (photovoltaic)
solid state lighting
synthesis (novel materials)
synthesis (self-assembly)
thermal conductivity
transition metal dichalcogenides
broadband
electrodes - solar
heterostructures
light trapping
materials and chemistry by design
near-unity absorption
optics
phonons
photovoltaics
solar (photovoltaic)
solid state lighting
synthesis (novel materials)
synthesis (self-assembly)
thermal conductivity
transition metal dichalcogenides