Dislocation strain as the mechanism of phonon scattering at grain boundaries

Kim, Hyun-Sik; Kang, Stephen D.; Tang, Yinglu; Hanus, Riley; Jeffrey Snyder, G.

doi:10.1039/C5MH00299K

Dislocation strain as the mechanism of phonon scattering at grain boundaries

Journal Article · Fri Feb 26 00:00:00 EST 2016 · Materials Horizons

DOI:https://doi.org/10.1039/C5MH00299K· OSTI ID:1388407

^[1]; Kang, Stephen D. ^[1]; Tang, Yinglu ^[1]; Hanus, Riley ^[1]; ^[1]

Northwestern Univ., Evanston, IL (United States)

Thermal conductivities of polycrystalline thermoelectric materials are satisfactorily calculated by replacing the commonly used Casimir model (freqeuncy-independent) with grain boundary dislocation strain model (frequency-dependent) of Klemens. It is demonstrated that the grain boundaries are better described as a collection of dislocations rather than perfectly scattering interfaces.

View Accepted Manuscript (DOE)

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0001299

OSTI ID:: 1388407

Journal Information:: Materials Horizons, Journal Name: Materials Horizons Journal Issue: 3 Vol. 3; ISSN 2051-6347; ISSN MHAOAL

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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Dislocation strain as the mechanism of phonon scattering at grain boundaries

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