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Quantum anomalous Hall effect in time-reversal-symmetry breaking topological insulators

Journal Article · · Journal of Physics. Condensed Matter
 [1];  [1]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
The quantum anomalous Hall effect (QAHE), the last member of Hall family, was predicted to reflect quantized Hall conductivity $${{\sigma}_{yx}}=\frac{{{e}^{2}}}{h}$$ without any external magnetic field. The QAHE shares a similar physical phenomenon with the integer quantum Hall effect (QHE), whereas its physical origin relies on the intrinsic topological inverted band structure and ferromagnetism. Since the QAHE does not require external energy input in the form of magnetic field, it is believed that this effect has unique potential for applications in future electronic devices with low-power consumption. More recently, the QAHE has been experimentally observed in thin films of the time-reversal symmetry breaking ferromagnetic (FM) topological insulators (TI), Cr- and V- doped (Bi,Sb)2Te3. Here, we review the history of TI based QAHE, the route to the experimental observation of the QAHE in the above two systems, the current status of the research of the QAHE, and finally the prospects for future studies.
Research Organization:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Energy Frontier Research Center (EFRC) Solid-State Solar-Thermal Energy Conversion Center (S3TEC)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
SC0001299
OSTI ID:
1388387
Alternate ID(s):
OSTI ID: 22884057
Journal Information:
Journal of Physics. Condensed Matter, Journal Name: Journal of Physics. Condensed Matter Journal Issue: 12 Vol. 28; ISSN 0953-8984
Publisher:
IOP PublishingCopyright Statement
Country of Publication:
United States
Language:
English

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Cited By (17)

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Weak Localization and Antilocalization in Topological Materials with Impurity Spin-Orbit Interactions journal July 2017
The Material Efforts for Quantized Hall Devices Based on Topological Insulators journal December 2019
Magnetic topological insulators journal January 2019
High-quality single-crystal thulium iron garnet films with perpendicular magnetic anisotropy by off-axis sputtering journal May 2018
Direct observation of proximity-induced magnetism and spin reorientation in topological insulator on a ferrimagnetic oxide journal February 2019
Signatures of temperature driven antiferromagnetic transition in the electronic structure of topological insulator MnBi 2 Te 4 journal February 2020
Towards microscopic control of the magnetic exchange coupling at the surface of a topological insulator journal September 2018
Magnetic and transport properties in the magnetic topological insulators MnB i 2 T e 4 ( B i 2 T e 3 ) n ( n = 1 , 2 ) journal October 2019
Dirac-electron-mediated magnetic proximity effect in topological insulator/magnetic insulator heterostructures journal November 2017
Systematics of electronic and magnetic properties in the transition metal doped Sb 2 Te 3 quantum anomalous Hall platform journal April 2018
Majorana corner states in a two-dimensional magnetic topological insulator on a high-temperature superconductor journal December 2018
Interface effects on the magnetic-proximity-induced quantized Hall response in heterostructures based on three-dimensional topological insulators journal March 2019
Transport properties of thin flakes of the antiferromagnetic topological insulator MnB i 2 T e 4 journal April 2019
Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator MnB i 2 T e 4 journal August 2019
Systematics of electronic and magnetic properties in the transition metal doped $Sb_{2}Te_{3}$ quantum anomalous Hall platform text January 2018
Dirac-Electrons-Mediated Magnetic Proximity Effect in Topological Insulator / Magnetic Insulator Heterostructures text January 2017

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