Understanding of the contact of nanostructured thermoelectric n-type Bi2Te2.7Se0.3 legs for power generation applications
- Univ. of Houston, TX (United States)
- Boston College, Chestnut Hill, MA (United States)
- Univ. of Houston, TX (United States); Minzu Univ. of China, Beijing (China)
- GMZ Energy, Waltham, MA (United States)
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Traditional processes of making contacts (metallization layer) onto bulk crystalline Bi2Te3-based materials do not work for nanostructured thermoelectric materials either because of weak bonding strength or an unstable contact interface at temperatures higher than 200 °C. Hot pressing of nickel contact onto nanostructured thermoelectric legs in a one-step process leads to strong bonding. However, such a process results in large contact resistance in n-type Ni/Bi2Te2.7Se0.3/Ni legs, although not in p-type Ni/Bi0.4Sb1.6Te3/Ni legs. A systematic study was carried out here to investigate the detailed reaction and diffusion at the interface of the nickel layer and n-type Bi2Te3-based thermoelectric material layer. We found that a p-type region formed within the n-type Bi2Te2.7Se0.3 during hot pressing due to Te deficiency and Ni doping, leading to a large contact resistance.
- Research Organization:
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0001299; FG02-09ER46577
- OSTI ID:
- 1386947
- Journal Information:
- Journal of Materials Chemistry. A, Vol. 1, Issue 42; ISSN 2050-7488
- Publisher:
- Royal Society of ChemistryCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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