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Title: ‘Soft’ amplifier circuits based on field-effect ionic transistors

Abstract

Soft materials can be used as the building blocks for electronic devices with extraordinary properties. We introduce a theoretical model for a field-effect transistor in which ions are the gated species instead of electrons. Our model incorporates readily-available soft materials, such as conductive porous membranes and polymer-electrolytes to represent a device that regulates ion currents and can be integrated as a component in larger circuits. By means of Nernst–Planck numerical simulations as well as an analytical description of the steady-state current we find that the responses of the system to various input voltages can be categorized into ohmic, sub-threshold, and active modes. This is fully analogous to what is known for the electronic field-effect transistor (FET). Pivotal FET properties such as the threshold voltage and the transconductance crucially depend on the half-cell redox potentials of the source and drain electrodes as well as on the polyelectrolyte charge density and the gate material work function. We confirm the analogy with the electronic FETs through numerical simulations of elementary amplifier circuits in which we successfully substitute the electronic transistor by an ionic transistor.

Authors:
 [1];  [1]
  1. Northwestern Univ., Evanston, IL (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Bio-Inspired Energy Science (CBES)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1385927
Grant/Contract Number:  
SC0000989
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Soft Matter
Additional Journal Information:
Journal Volume: 11; Journal Issue: 24; Related Information: CBES partners with Northwestern University (lead); Harvard University; New York University; Pennsylvania State University; University of Michigan; University of Pittsburgh; Journal ID: ISSN 1744-683X
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; catalysis (homogeneous); solar (photovoltaic); bio-inspired; charge transport; mesostructured materials; materials and chemistry by design; synthesis (novel materials); synthesis (self-assembly)

Citation Formats

Boon, Niels, and Olvera de la Cruz, Monica. ‘Soft’ amplifier circuits based on field-effect ionic transistors. United States: N. p., 2015. Web. doi:10.1039/c5sm00573f.
Boon, Niels, & Olvera de la Cruz, Monica. ‘Soft’ amplifier circuits based on field-effect ionic transistors. United States. https://doi.org/10.1039/c5sm00573f
Boon, Niels, and Olvera de la Cruz, Monica. 2015. "‘Soft’ amplifier circuits based on field-effect ionic transistors". United States. https://doi.org/10.1039/c5sm00573f. https://www.osti.gov/servlets/purl/1385927.
@article{osti_1385927,
title = {‘Soft’ amplifier circuits based on field-effect ionic transistors},
author = {Boon, Niels and Olvera de la Cruz, Monica},
abstractNote = {Soft materials can be used as the building blocks for electronic devices with extraordinary properties. We introduce a theoretical model for a field-effect transistor in which ions are the gated species instead of electrons. Our model incorporates readily-available soft materials, such as conductive porous membranes and polymer-electrolytes to represent a device that regulates ion currents and can be integrated as a component in larger circuits. By means of Nernst–Planck numerical simulations as well as an analytical description of the steady-state current we find that the responses of the system to various input voltages can be categorized into ohmic, sub-threshold, and active modes. This is fully analogous to what is known for the electronic field-effect transistor (FET). Pivotal FET properties such as the threshold voltage and the transconductance crucially depend on the half-cell redox potentials of the source and drain electrodes as well as on the polyelectrolyte charge density and the gate material work function. We confirm the analogy with the electronic FETs through numerical simulations of elementary amplifier circuits in which we successfully substitute the electronic transistor by an ionic transistor.},
doi = {10.1039/c5sm00573f},
url = {https://www.osti.gov/biblio/1385927}, journal = {Soft Matter},
issn = {1744-683X},
number = 24,
volume = 11,
place = {United States},
year = {2015},
month = {5}
}

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Cited by: 10 works
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Works referenced in this record:

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journal, April 2018