Stability of topological defects in chiral superconductors: London theory
This paper examines the thermodynamic stability of chiral domain walls and vortices—topological defects which can exist in chiral superconductors. Using London theory it is demonstrated that at sufficiently small applied and chiral fields the existence of domain walls and vortices in the sample is not favored and the sample's configuration is a single domain. The particular chirality of the single-domain configuration is neither favored nor disfavored by the applied field. Increasing the field leads to an entry of a domain-wall loop or a vortex into the sample. The formation of a straight domain wall is never preferred in equilibrium. Values of the entry (critical) fields for both types of defects, as well as the equilibrium size of the domain-wall loop, are calculated. We also consider a mesoscopic chiral sample and calculate its zero-field magnetization, susceptibility, and a change in the magnetic moment due to a vortex or a domain-wall entry. We show that in the case of a soft domain wall whose energetics is dominated by the chiral current (and not by the surface tension) its behavior in mesoscopic samples is substantially different from that in the bulk case and can be used for a controllable transfer of edge excitations. The applicability of these results to Sr 2 RuO 4 —a tentative chiral superconductor—is discussed.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). Center for Emergent Superconductivity (CES)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- DOE Contract Number:
- AC02-98CH10886
- OSTI ID:
- 1385606
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 84, Issue 21; Related Information: CES partners with Brookhaven National Laboratory (BNL); Argonne National Laboratory; University of Illinois, Urbana-Champaign; Los Alamos National Laboratory; ISSN 1098-0121
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
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