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Systematic electrochemical oxidative doping of P3HT to probe interfacial charge transfer across polymer–fullerene interfaces

Journal Article · · Journal of Materials Chemistry. A
DOI:https://doi.org/10.1039/C4TA04319G· OSTI ID:1384693

This work demonstrates the detection and control of interfacial charge transfer across polymer–fullerene interfaces relevant to organic electronic platforms, including solar cells and photodetectors. Electrochemical deposition of poly(3-hexylthiophene) (e-P3HT) and subsequent electrochemical oxidation to systematically vary the fraction of oxidized thiophene (e-P3HT+) was used to form donor polymer films. The fullerene electron acceptor C60 was vacuum deposited onto the e-P3HT, and interfacial interactions were monitored with optical and photoelectron spectroscopy. Charge redistribution (sub-stoichiometric or even stoichiometric electron transfer) from e-P3HT to C60 was observed when the initial fraction of e-P3HT+ was low, as evidenced by the formation of new polaronic species and simultaneous n-doping of the C60. These charge transfer results are expected to impact interfacial rates of free carrier generation and recombination, as well as competing charge transport processes, particularly in thin film devices (<60 nm). While charge transfer of this sort has been previously observed, the ability to control the extent of charge redistribution through the systematic oxidation of the thiophene species demonstrates additional chemical tunability that can further increase the functionality of polymer–fullerene type II heterojunctions. Collectively, this work highlights the need to characterize and strategically manipulate nanoscale deviations from bulk properties in the future rational design of functional organic electronics.

Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Center for Interface Science: Solar Electric Materials (CISSEM)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0001084
OSTI ID:
1384693
Alternate ID(s):
OSTI ID: 1168029
Journal Information:
Journal of Materials Chemistry. A, Journal Name: Journal of Materials Chemistry. A Journal Issue: 45 Vol. 2; ISSN JMCAET; ISSN 2050-7488
Publisher:
Royal Society of ChemistryCopyright Statement
Country of Publication:
United States
Language:
English

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Cited By (3)

Tuning charge transport dynamics via clustering of doping in organic semiconductor thin films journal July 2019
Neutron Radiation Tolerance of Two Benchmark Thiophene-Based Conjugated Polymers: the Importance of Crystallinity for Organic Avionics journal January 2017
Synthesis and characterization of poly(3-hexylthiophene): improvement of regioregularity and energy band gap journal January 2018