Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures

Kang, Seok Ju; Lee, Gwan-Hyoung; Yu, Young-Jun; Zhao, Yue; Kim, Bumjung; Watanabe, Kenji; Taniguchi, Takashi; Hone, James; Kim, Philip; Nuckolls, Colin

doi:10.1002/adfm.201400348

Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures

Journal Article · Mon Jun 16 00:00:00 EDT 2014 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.201400348· OSTI ID:1384174

Kang, Seok Ju ^[1]; Lee, Gwan-Hyoung ^[2]; Yu, Young-Jun ^[3]; Zhao, Yue ^[4]; Kim, Bumjung ^[1]; Watanabe, Kenji ^[5]; Taniguchi, Takashi ^[5]; Hone, James ^[6]; Kim, Philip ^[4]; Nuckolls, Colin ^[1]

Department of Chemistry, Columbia University, New York NY 10027 USA
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 Korea
Department of Physics, Columbia University, New York NY 10027 USA; Creative Research Center for Graphene Electronics, Electronics and Telecommunications Research Institute(ETRI), Daejeon 305-700 Korea
Department of Physics, Columbia University, New York NY 10027 USA
National Institute for Materials Science, 1-1 Namiki Tsukuba 305-0044 Japan
Department of Mechanical Engineering, Columbia University, New York NY 10027 USA

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Re-Defining Photovoltaic Efficiency Through Molecule Scale Control (RPEMSC)

Sponsoring Organization:: USDOE SC Office of Basic Energy Sciences (SC-22)

DOE Contract Number:: SC0001085

OSTI ID:: 1384174

Journal Information:: Advanced Functional Materials, Journal Name: Advanced Functional Materials Journal Issue: 32 Vol. 24; ISSN 1616-301X

Publisher:: Wiley

Country of Publication:: United States

Language:: English

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