skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Modeling amorphous thin films: Kinetically limited minimization

Authors:
; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Inverse Design (CID)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1384123
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 90; Journal Issue: 9; Related Information: CID partners with the National Renewable Energy Laboratory (lead); Colorado School of Mines; Northwestern University; Oregon State University; SLAC National Accelerator Laboratory; University of Colorado; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solar (fuels), photosynthesis (natural and artificial), electrodes - solar, defects, spin dynamics, materials and chemistry by design, synthesis (novel materials)

Citation Formats

Zawadzki, Paweł P., Perkins, John, and Lany, Stephan. Modeling amorphous thin films: Kinetically limited minimization. United States: N. p., 2014. Web. doi:10.1103/PhysRevB.90.094203.
Zawadzki, Paweł P., Perkins, John, & Lany, Stephan. Modeling amorphous thin films: Kinetically limited minimization. United States. doi:10.1103/PhysRevB.90.094203.
Zawadzki, Paweł P., Perkins, John, and Lany, Stephan. Mon . "Modeling amorphous thin films: Kinetically limited minimization". United States. doi:10.1103/PhysRevB.90.094203.
@article{osti_1384123,
title = {Modeling amorphous thin films: Kinetically limited minimization},
author = {Zawadzki, Paweł P. and Perkins, John and Lany, Stephan},
abstractNote = {},
doi = {10.1103/PhysRevB.90.094203},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 9,
volume = 90,
place = {United States},
year = {2014},
month = {9}
}

Works referenced in this record:

Generalized Gradient Approximation Made Simple [Phys. Rev. Lett. 77, 3865 (1996)]
journal, February 1997


Thin Film Synthesis by Energetic Condensation
journal, August 2001


Characterization of amorphous In 2 O 3 : An ab initio molecular dynamics study
journal, November 2011

  • Aliano, Antonio; Catellani, Alessandra; Cicero, Giancarlo
  • Applied Physics Letters, Vol. 99, Issue 21
  • DOI: 10.1063/1.3664224

Track formation in SiO 2 quartz and the thermal-spike mechanism
journal, May 1994


Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
journal, November 2004

  • Nomura, Kenji; Ohta, Hiromichi; Takagi, Akihiro
  • Nature, Vol. 432, Issue 7016, p. 488-492
  • DOI: 10.1038/nature03090

A structure zone diagram including plasma-based deposition and ion etching
journal, May 2010


From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999


Electronic structure of amorphous indium oxide transparent conductors
journal, September 2009


A comprehensive model of stress generation and relief processes in thin films deposited with energetic ions
journal, April 2006


Amorphous silicon studied by ab initio molecular dynamics: Preparation, structure, and properties
journal, November 1991


Material characteristics and applications of transparent amorphous oxide semiconductors
journal, January 2010


Magnetron sputtering – Milestones of 30 years
journal, June 2010


Low-Temperature Solution-Processed Amorphous Indium Tin Oxide Field-Effect Transistors
journal, August 2009

  • Kim, Hyun Sung; Kim, Myung-Gil; Ha, Young-Geun
  • Journal of the American Chemical Society, Vol. 131, Issue 31
  • DOI: 10.1021/ja903886r