Evolution of ion-induced nanoparticle arrays on GaAs surfaces
- Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Materials Science and Engineering
- Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Physics
We have examined the evolution of irradiation-induced Ga nanoparticle (NP) arrays on GaAs surfaces. Focused-ion-beam irradiation of pre-patterned GaAs surfaces induces monotonic increases in the NP volume and aspect ratio up to a saturation ion dose, independent of NP location within the array. Beyond the saturation ion dose, the NP volume continues to increase monotonically while the NP aspect ratio decreases monotonically. In addition, the NP volumes (aspect ratios) are highest (lowest) for the corner NPs. We discuss the relative influences of bulk and surface diffusion on the evolution of Ga NP arrays.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0000957
- OSTI ID:
- 1383847
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 18; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 2 works
Citation information provided by
Web of Science
Web of Science
Ion irradiation of III–V semiconductor surfaces: From self-assembled nanostructures to plasmonic crystals
|
journal | December 2019 |
Similar Records
Evolution of ion-induced nanoparticle arrays on GaAs surfaces
Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces
Ga nanoparticle-enhanced photoluminescence of GaAs
Journal Article
·
Mon May 05 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:1383847
+3 more
Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces
Journal Article
·
Mon Aug 12 00:00:00 EDT 2013
· Applied Physics Letters
·
OSTI ID:1383847
+4 more
Ga nanoparticle-enhanced photoluminescence of GaAs
Journal Article
·
Mon Sep 02 00:00:00 EDT 2013
· Applied Physics Letters
·
OSTI ID:1383847
+8 more