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Title: Evolution of ion-induced nanoparticle arrays on GaAs surfaces

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4874329· OSTI ID:1383847
 [1];  [2];  [1];  [1];  [1];  [1];  [1]
  1. Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Materials Science and Engineering
  2. Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Physics

We have examined the evolution of irradiation-induced Ga nanoparticle (NP) arrays on GaAs surfaces. Focused-ion-beam irradiation of pre-patterned GaAs surfaces induces monotonic increases in the NP volume and aspect ratio up to a saturation ion dose, independent of NP location within the array. Beyond the saturation ion dose, the NP volume continues to increase monotonically while the NP aspect ratio decreases monotonically. In addition, the NP volumes (aspect ratios) are highest (lowest) for the corner NPs. We discuss the relative influences of bulk and surface diffusion on the evolution of Ga NP arrays.

Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0000957
OSTI ID:
1383847
Journal Information:
Applied Physics Letters, Vol. 104, Issue 18; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

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Diffusion constant of Ga adatom on GaAs (001) surface: molecular dynamics calculations journal May 1995

Cited By (1)