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Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength

Journal Article · Fri Feb 28 23:00:00 EST 2014 · Applied Physics Express

DOI:https://doi.org/10.7567/APEX.7.032101· OSTI ID:1383334

Armstrong, Andrew M.; Crawford, Mary H.; Koleske, Daniel D.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)

Sponsoring Organization:: USDOE SC Office of Basic Energy Sciences (SC-22)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1383334

Journal Information:: Applied Physics Express, Journal Name: Applied Physics Express Journal Issue: 3 Vol. 7; ISSN 1882-0778

Publisher:: Japan Society of Applied Physics

Country of Publication:: United States

Language:: English

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Related Subjects

solar (photovoltaic)
solid state lighting
phonons
materials and chemistry by design
optics
synthesis (novel materials)