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Title: Study of the Thermoelectric Properties of Lead Selenide Doped with Boron, Gallium, Indium, or Thallium

Journal Article · · Journal of the American Chemical Society
DOI:https://doi.org/10.1021/ja307910u· OSTI ID:1382354
 [1];  [1];  [1];  [1];  [2];  [1];  [1];  [3];  [3];  [2];  [1]
  1. Boston College, Chestnut Hill, MA (United States). Dept. of Physics
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Mechanical Engineering
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division

Group IIIA elements (B, Ga, In, and Tl) have been doped into PbSe for enhancement of thermoelectric properties. The electrical conductivity, Seebeck coefficient, and thermal conductivity were systematically studied here. Room-temperature Hall measurements showed an effective increase in the electron concentration upon both Ga and In doping and the hole concentration upon Tl doping to ~7 × 1019 cm–3. No resonant doping phenomenon was observed when PbSe was doped with B, Ga, or In. The highest room-temperature power factor ~2.5 × 10–3 W m–1 K–2 was obtained for PbSe doped with 2 atom % B. However, the power factor in B-doped samples decreased with increasing temperature, opposite to the trend for the other dopants. A figure of merit (ZT) of ~1.2 at ~873 K was achieved in PbSe doped with 0.5 atom % Ga or In. With Tl doping, modification of the band structure around the Fermi level helped to increase the Seebeck coefficient, and the lattice thermal conductivity decreased, probably as a result of effective phonon scattering by both the heavy Tl3+ ions and the increased grain boundary density after ball milling. The highest p-type ZT value was ~1.0 at ~723 K.

Research Organization:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0001299
OSTI ID:
1382354
Journal Information:
Journal of the American Chemical Society, Vol. 134, Issue 42; ISSN 0002-7863
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 83 works
Citation information provided by
Web of Science

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Enhancing average ZT in pristine PbSe by over-stoichiometric Pb addition journal October 2016
High Performance Thermoelectric Materials: Progress and Their Applications journal November 2017
Contrasting role of antimony and bismuth dopants on the thermoelectric performance of lead selenide journal May 2014
Towards a high thermoelectric performance in CdO ceramics by introducing multiscale scattering centers via ZnCO 3 doping journal March 2018
High thermoelectric performance of Ag doped SnTe polycrystalline bulks via the synergistic manipulation of electrical and thermal transport journal January 2019
High thermoelectric performance by resonant dopant indium in nanostructured SnTe journal July 2013
Influence of periodic table in designing solid-state metal chalcogenides for thermoelectric energy conversion journal December 2019
Carrier tuning and multiple phonon scattering induced high thermoelectric performance in n-type Sb-doped PbTe alloys journal March 2019
Enhancement of thermoelectric performance across the topological phase transition in dense lead selenide journal October 2019
High-throughput computational screening of thermal conductivity, Debye temperature, and Grüneisen parameter using a quasiharmonic Debye model journal November 2014
Enhancing Thermoelectric Performance of PbSe by Se Vacancies journal February 2018
Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration journal January 2015
Thermoelectric GeTe with Diverse Degrees of Freedom Having Secured Superhigh Performance journal February 2019
BiCuSeO oxyselenides: new promising thermoelectric materials [BiCuSeO оксиселенид - жаңа келешегi жоғары термоэлектрлiк материал ретiнде] journal January 2019

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