Study of the Thermoelectric Properties of Lead Selenide Doped with Boron, Gallium, Indium, or Thallium

Zhang, Qian; Cao, Feng; Lukas, Kevin; Liu, Weishu; Esfarjani, Keivan; Opeil, Cyril; Broido, David; Parker, David; Singh, David J.; Chen, Gang; Ren, Zhifeng

doi:10.1021/ja307910u

Study of the Thermoelectric Properties of Lead Selenide Doped with Boron, Gallium, Indium, or Thallium

Journal Article · Mon Oct 01 00:00:00 EDT 2012 · Journal of the American Chemical Society

DOI:https://doi.org/10.1021/ja307910u· OSTI ID:1382354

Zhang, Qian ^[1]; Cao, Feng ^[1]; Lukas, Kevin ^[1]; Liu, Weishu ^[1]; Esfarjani, Keivan ^[2]; Opeil, Cyril ^[1]; Broido, David ^[1]; Parker, David ^[3]; Singh, David J. ^[3]; Chen, Gang ^[2]; Ren, Zhifeng ^[1]

Boston College, Chestnut Hill, MA (United States). Dept. of Physics
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Mechanical Engineering
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division

Group IIIA elements (B, Ga, In, and Tl) have been doped into PbSe for enhancement of thermoelectric properties. The electrical conductivity, Seebeck coefficient, and thermal conductivity were systematically studied here. Room-temperature Hall measurements showed an effective increase in the electron concentration upon both Ga and In doping and the hole concentration upon Tl doping to ~7 × 10¹⁹ cm^–3. No resonant doping phenomenon was observed when PbSe was doped with B, Ga, or In. The highest room-temperature power factor ~2.5 × 10^–3 W m^–1 K^–2 was obtained for PbSe doped with 2 atom % B. However, the power factor in B-doped samples decreased with increasing temperature, opposite to the trend for the other dopants. A figure of merit (ZT) of ~1.2 at ~873 K was achieved in PbSe doped with 0.5 atom % Ga or In. With Tl doping, modification of the band structure around the Fermi level helped to increase the Seebeck coefficient, and the lattice thermal conductivity decreased, probably as a result of effective phonon scattering by both the heavy Tl³⁺ ions and the increased grain boundary density after ball milling. The highest p-type ZT value was ~1.0 at ~723 K.

View Accepted Manuscript (DOE)

Research Organization:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: SC0001299

OSTI ID:: 1382354

Alternate ID(s):: OSTI ID: 1060859
OSTI ID: 1080575

Journal Information:: Journal of the American Chemical Society, Journal Name: Journal of the American Chemical Society Journal Issue: 42 Vol. 134; ISSN 0002-7863

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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