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Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3602319· OSTI ID:1380871
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Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Center for Energy Efficient Materials (CEEM)
Sponsoring Organization:
USDOE SC Office of Basic Energy Sciences (SC-22)
DOE Contract Number:
SC0001009
OSTI ID:
1380871
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 98; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English

References (8)

Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes journal March 2005
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening journal February 2004
Growth of embedded photonic crystals for GaN-based optoelectronic devices journal July 2009
Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes journal December 2010
Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction journal September 2005
InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode journal December 2002
High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals journal January 2010
Temperature dependence of polarized photoluminescence from nonpolar m-plane InGaN multiple quantum wells for blue laser diodes journal January 2008

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