Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

Kioupakis, Emmanouil; Rinke, Patrick; Delaney, Kris T.; Van de Walle, Chris G.

doi:10.1063/1.3570656

Title: Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

Journal Article · Mon Apr 18 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3570656· OSTI ID:1380476

Kioupakis, Emmanouil; Rinke, Patrick; Delaney, Kris T.; Van de Walle, Chris G.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Energy Efficient Materials (CEEM)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

DOE Contract Number:: SC0001009

OSTI ID:: 1380476

Journal Information:: Applied Physics Letters, Vol. 98, Issue 16; Related Information: CEEM partners with the University of California, Santa Barbara (lead); Purdue University; Los Alamos National Laboratory; National Renewable Energy Laboratory; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

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Efficiency droop in nitride-based light-emitting diodes Piprek, Joachim physica status solidi (a), Vol. 207, Issue 10, p. 2217-2225 https://doi.org/10.1002/pssa.201026149	journal	July 2010
GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels Ozgur, Ümit Proceedings of the IEEE, Vol. 98, Issue 7 https://doi.org/10.1109/JPROC.2010.2043210	journal	July 2010
Supression of carrier recombination in semiconductor lasers by phase-space filling Hader, J.; Moloney, J. V.; Koch, S. W. Applied Physics Letters, Vol. 87, Issue 20 https://doi.org/10.1063/1.2132524	journal	November 2005
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Title: Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

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