Electron field emission from undoped and doped DLC films
- LLNL
Electron field emission and electrical conductivity of undoped and nitrogen doped DLC films have been investigated. The films were grown by the PE CVD method from CH{sub 4}:H{sub 2} and CH{sub 4}:H{sub 2}:N{sub 2} gas mixtures, respectively. By varying nitrogen content in the gas mixture over the range 0 to 45%, corresponding concentrations of 0 to 8 % (atomic) could be achieved in the films. Three different gas pressures were used in the deposition chamber: 0.2, 0.6 and 0.8 Torr. Emission current measurements were performed at approximately 10{sup -6} Torr using the diode method with emitter-anode spacing set at 20 {micro}m. The current - voltage characteristics of the Si field electron emission arrays covered with DLC films show that threshold voltage (V{sub th}) varies in a complex manner with nitrogen content. As a function of nitrogen content, V{sub th} initially increases rapidly, then decreases and finally increases again for the highest concentration. Corresponding Fowler-Nordheim (F-N) plots follow F-N tunneling over a wide range. The F-N plots were used for determination of the work function, threshold voltage, field enhancement factor and effective emission area. For a qualitative explanation of experimental results, we treat the DLC film as a diamond-like (sp{sup 3} bonded) matrix with graphite-like inclusions.
- Research Organization:
- Lawrence Livermore National Lab., CA (US)
- Sponsoring Organization:
- USDOE Office of Defense Programs (DP) (US)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 13796
- Report Number(s):
- UCRL-JC-134060--Rev-1; YN0100000; YN0100000
- Country of Publication:
- United States
- Language:
- English
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