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KF post-deposition treatment of industrial Cu(In, Ga)(S, Se)2 thin-film surfaces: Modifying the chemical and electronic structure

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4998445· OSTI ID:1379465
 [1];  [2];  [3];  [1];  [4];  [5];  [4];  [5]
  1. Univ. of Nevada, Las Vegas (UNLV), Las Vegas, NV (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Univ. of Nevada, Las Vegas (UNLV), Las Vegas, NV (United States); Univ. of Hawaii at Manoa, Honolulu, HI (United States)
  4. STION, San Jose, CA (United States)
  5. Univ. of Nevada, Las Vegas (UNLV), Las Vegas, NV (United States); Karlsruhe Institute of Technology (KIT), Eggenstein-Leopoldshafen (Germany); Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany)
The chemical and electronic structures of industrial chalcopyrite photovoltaic absorbers after KF post-deposition treatment (KF-PDT) are investigated using electron spectroscopies to probe the occupied and unoccupied electronic states. In contrast to a variety of recent publications on the impact of KF-PDT, this study focuses on industrial Cu(In,Ga)(S,Se)2 absorbers that also contain sulfur at the surface. We find that the KF-PDT removes surface adsorbates and oxides and also observe a change in the S/Se ratio. Furthermore, the KF-PDT leads to a Cu reduction at the surface but to a much lower degree than the strongly Cu-depleted or even Cu-free surfaces reported for (non-industrial) sulfur-free Cu(In,Ga)Se2 absorbers. Furthermore, the valence band maximum at the surface is found at a lower energy compared to the untreated absorber, and the conduction band minimum is found at a higher energy, overall revealing a widening of the bandgap in the surface region.
Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE; USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S), SunShot Foundational Program to Advance Cell Efficiency (F-PACE)
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1379465
Alternate ID(s):
OSTI ID: 1374925
Report Number(s):
NREL/JA--5K00-70059
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 111; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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Cited By (6)

Alkali Postdeposition Treatment-Induced Changes of the Chemical and Electronic Structure of Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers: A First-Principle Perspective journal December 2018
Surface and Interface Properties in Thin‐Film Solar Cells: Using Soft X‐rays and Electrons to Unravel the Electronic and Chemical Structure journal February 2019
Effect of Cu Content on Post‐Sulfurization of Cu(In,Ga)Se 2 Films and Corresponding Solar Cell Performance journal August 2019
Observation and manipulation of CIGSe phase formation in a two stage sequential process journal September 2019
Energy level alignment of Cu ( In , Ga ) ( S , Se ) 2 absorber compounds with In 2 S 3 , NaIn 5 S 8 , and CuIn 5 S 8 Cd-free buffer materials journal July 2019
Surface and Interface Properties in Thin-Film Solar Cells: Using Soft X-rays and Electrons to Unravel the Electronic and Chemical Structure text January 2019