GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth: Preprint
Conference
·
OSTI ID:1378886
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Yale University
- Hong Kong University of Science and Technology
Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, low-cost tandem photovoltaics. Here, we present a single junction GaAs solar cell grown monolithically on polished Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers. The GaAs is free of antiphase domains and maintains a relatively low TDD of 4x107 cm-2, despite the lack of a graded buffer. This 6.25 percent-efficient demonstration solar cell shows promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1378886
- Report Number(s):
- NREL/CP-5J00-67778
- Country of Publication:
- United States
- Language:
- English
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