Avalanche diode having reduced dark current and method for its manufacture

Davids, Paul; Starbuck, Andrew Lee; Pomerene, Andrew T. S.

Title: Avalanche diode having reduced dark current and method for its manufacture

Patent · Tue Aug 29 00:00:00 EDT 2017

OSTI ID:1377852

Davids, Paul; Starbuck, Andrew Lee; Pomerene, Andrew T. S.

An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-94AL85000

Assignee:: National Technology & Engineering Solutions of Sandia, LLC

Patent Number(s):: 9,748,429

Application Number:: 14/870,195

OSTI ID:: 1377852

Resource Relation:: Patent File Date: 2015 Sep 30

Country of Publication:: United States

Language:: English

References (11)

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Methods of fabricating semiconductor structures having epitaxially grown source and drain elements Langdo, Thomas A.; Lochtefeld, Anthony J. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6946371 US Patent Document 6,946,371	patent	September 2005
Germanium silicon heterostructure photodetectors Masini, Gianlorenzo; Gunn, III, Lawrence C.; Capellini, Giovanni https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7397101 US Patent Document 7,397,101	patent	July 2008
Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry King, Clifford A.; Rafferty, Conor S. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7453129 US Patent Document 7,453,129	patent	November 2008
Defect reduction using aspect ratio trapping Bai, Jie; Park, Ji-Soo; Lochtefeld, Anthony J. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8173551 US Patent Document 8,173,551	patent	May 2012
Planar avalanche photodiode Ko, Cheng C.; Levine, Barry https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20040251483 US Patent Application 10/836878; 20040251483	patent-application	December 2004
Laterally-integrated waveguide photodetector apparatus and related coupling methods Ahn, Donghwan; Liu, Jifeng; Michel, Jurgen https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20070104441 US Patent Application 11/269907; 20070104441	patent-application	May 2007
Double quench circuit for an avalanche current device Deschamps, Pierre D. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20080231339 US Patent Application 11/726847; 20080231339	patent-application	September 2008
Monolithic Three Terminal Photodetector Na, Yun-chung N.; Kang, Yimin https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20120126286 US Patent Application 12/952023; 20120126286	patent-application	May 2012
Study of the defect elimination mechanisms in aspect ratio trapping Ge growth Bai, J.; Park, J.-S.; Cheng, Z. Applied Physics Letters, Vol. 90, Issue 10, Article No. 101902 https://doi.org/10.1063/1.2711276	journal	March 2007
Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping Park, J.-S.; Bai, J.; Curtin, M. Applied Physics Letters, Vol. 90, Issue 5, Article No. 052113 https://doi.org/10.1063/1.2435603	journal	January 2007

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