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Title: Avalanche diode having reduced dark current and method for its manufacture

Abstract

An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.

Inventors:
; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1377852
Patent Number(s):
9,748,429
Application Number:
14/870,195
Assignee:
National Technology & Engineering Solutions of Sandia, LLC SNL-A
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Sep 30
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Davids, Paul, Starbuck, Andrew Lee, and Pomerene, Andrew T. S. Avalanche diode having reduced dark current and method for its manufacture. United States: N. p., 2017. Web.
Davids, Paul, Starbuck, Andrew Lee, & Pomerene, Andrew T. S. Avalanche diode having reduced dark current and method for its manufacture. United States.
Davids, Paul, Starbuck, Andrew Lee, and Pomerene, Andrew T. S. Tue . "Avalanche diode having reduced dark current and method for its manufacture". United States. https://www.osti.gov/servlets/purl/1377852.
@article{osti_1377852,
title = {Avalanche diode having reduced dark current and method for its manufacture},
author = {Davids, Paul and Starbuck, Andrew Lee and Pomerene, Andrew T. S.},
abstractNote = {An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {8}
}

Patent:

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Works referenced in this record:

Study of the defect elimination mechanisms in aspect ratio trapping Ge growth
journal, March 2007

  • Bai, J.; Park, J.-S.; Cheng, Z.
  • Applied Physics Letters, Vol. 90, Issue 10, Article No. 101902
  • DOI: 10.1063/1.2711276

Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping
journal, January 2007

  • Park, J.-S.; Bai, J.; Curtin, M.
  • Applied Physics Letters, Vol. 90, Issue 5, Article No. 052113
  • DOI: 10.1063/1.2435603