Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires

Li, Zhen; Xu, Enzhi; Losovyj, Yaroslav; Li, Nan; Chen, Aiping; Swartzentruber, Brian; Sinitsyn, Nikolai; Yoo, Jinkyoung; Jia, Quanxi; Zhang, Shixiong

doi:10.1039/C7NR04934J

Surface oxidation and thermoelectric properties of indium-doped tin telluride nanowires

Journal Article · Tue Aug 08 00:00:00 EDT 2017 · Nanoscale

DOI:https://doi.org/10.1039/C7NR04934J· OSTI ID:1377605

^[1]; Xu, Enzhi ^[1]; Losovyj, Yaroslav ^[1]; Li, Nan ^[2]; Chen, Aiping ^[2]; Swartzentruber, Brian ^[3]; Sinitsyn, Nikolai ^[2]; ^[2]; Jia, Quanxi ^[4]; ^[1]

Indiana Univ., Bloomington, IN (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Univ. at Buffalo - The State Univ. of New York, Buffalo, NY (United States)

The In-doped SnTe nanowire surface is composed of In₂O₃, SnO₂, Te and TeO₂ which can be readily removed by argon ion sputtering.

View Accepted Manuscript (DOE)

Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States); Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; AC52-06NA25396

OSTI ID:: 1377605

Alternate ID(s):: OSTI ID: 1407898

Report Number(s):: LA-UR--17-27136; SAND--2017-9019J; 656453

Journal Information:: Nanoscale, Journal Name: Nanoscale Journal Issue: 35 Vol. 9; ISSN NANOHL; ISSN 2040-3364

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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