Growth of electronically distinct manganite thin films by modulating cation stoichiometry

Ryu, Sangkyun; Lee, Joonhyuk; Ahn, Eunyoung; Kim, Jiwoong; Herklotz, Andreas; Bae, Jong-Seong; Lee, Ho Nyung; Kim, Younghak; Kim, Jae-Young; Jeon, Tae-Yeol; Cho, Jinhyung; Park, Sungkyun; Jeen, Hyoungjeen

doi:10.1063/1.4989578

Title: Growth of electronically distinct manganite thin films by modulating cation stoichiometry

Journal Article · Mon Jun 26 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4989578· OSTI ID:1376539

Ryu, Sangkyun ^[1]; Lee, Joonhyuk ^[1]; Ahn, Eunyoung ^[1]; Kim, Jiwoong ^[1]; Herklotz, Andreas ^[2]; Bae, Jong-Seong ^[3];

^[2]; Kim, Younghak ^[4]; Kim, Jae-Young ^[4]; Jeon, Tae-Yeol ^[4]; Cho, Jinhyung ^[1]; Park, Sungkyun ^[1];

^[1]

Pusan National Univ., Busan (Korea, Republic of)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Korea Basic Science Inst., Busan (Korea, Republic of)
Pohang Accelerator Lab. (PAL) (Korea, Republic of)

Nd_1-xSr_xMnO₃ (NSMO) is a well-known manganite due to close connection between structure, transport, magnetism, and chemistry. Thus, it would be an ideal system to study modification of physical properties by external stimuli including control of stoichiometry in growth. In this work, we show that abrupt change of electronic and magnetic properties can be achieved by subtle change of oxygen partial pressure in pulsed laser deposition. Interestingly, the pressure indeed modulates cation stoichiometry. We clearly observed that the films grown at 150 mTorr and higher showed clear insulator to metal transition and stronger magnetism, commonly found in less hole doping, while the films grown at 130 mTorr and lower showed insulating behavior and weak magnetism. From soft x-ray spectroscopic methods, we clearly observed the compositional difference in those thin films. This result is further supported by scattering of lighter elements in high oxygen partial pressure but not by anion deficiency in growth.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725; Office of Science

OSTI ID:: 1376539

Alternate ID(s):: OSTI ID: 1366574

Journal Information:: Applied Physics Letters, Vol. 110, Issue 26; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 5 works

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