High-performance multilayer WSe2 field-effect transistors with carrier type control

Pudasaini, Pushpa Raj; Oyedele, Akinola; Zhang, Cheng; Stanford, Michael G.; Cross, Nicholas; Wong, Anthony T.; Hoffman, Anna N.; Xiao, Kai; Duscher, Gerd; Mandrus, David G.; Ward, Thomas Z.; Rack, Philip D.

doi:10.1007/s12274-017-1681-5

High-performance multilayer WSe₂ field-effect transistors with carrier type control

Journal Article · Thu Jul 06 00:00:00 EDT 2017 · Nano Research

DOI:https://doi.org/10.1007/s12274-017-1681-5· OSTI ID:1376482

Pudasaini, Pushpa Raj ^[1]; Oyedele, Akinola ^[2]; Zhang, Cheng ^[1]; Stanford, Michael G. ^[3]; Cross, Nicholas ^[3]; Wong, Anthony T. ^[3]; Hoffman, Anna N. ^[3]; Xiao, Kai ^[4]; Duscher, Gerd ^[5]; Mandrus, David G. ^[5]; Ward, Thomas Z. ^[6]; Rack, Philip D. ^[1]

Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences; Univ. of Tennessee, Knoxville, TN (United States). Bredesen Center for Interdisciplinary Research and Graduate Education
Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences
Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division

In this paper, high-performance multilayer WSe₂ field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe₂ FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe₂ thickness. The carrier type evolves with increasing WSe₂ channel thickness, being p-type, ambipolar, and n-type at thicknesses <3, ~4, and >5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe₂ as a function of the thickness and the carrier band offsets relative to the metal contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. Finally, this work demonstrates progress towards the realization of high-performance multilayer WSe₂ FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and optoelectronic applications.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)

Sponsoring Organization:: Gordon and Betty Moore Foundation (United States); National Science Foundation (NSF) (United States); USDOE; USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC05-00OR22725; SC0002136

OSTI ID:: 1376482

Alternate ID(s):: OSTI ID: 1423050
OSTI ID: 22856324

Journal Information:: Nano Research, Journal Name: Nano Research Journal Issue: 2 Vol. 11; ISSN 1998-0124

Publisher:: SpringerCopyright Statement

Country of Publication:: United States

Language:: English

References (45)

Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T. Advanced Functional Materials, Vol. 26, Issue 17 https://doi.org/10.1002/adfm.201505274	journal	February 2016
Carrier Type Control of WSe ₂ Field-Effect Transistors by Thickness Modulation and MoO ₃ Layer Doping Zhou, Changjian; Zhao, Yuda; Raju, Salahuddin Advanced Functional Materials, Vol. 26, Issue 23 https://doi.org/10.1002/adfm.201600292	journal	April 2016
Contact Metal–MoS ₂ Interfacial Reactions and Potential Implications on MoS ₂ -Based Device Performance Smyth, Christopher M.; Addou, Rafik; McDonnell, Stephen The Journal of Physical Chemistry C, Vol. 120, Issue 27 https://doi.org/10.1021/acs.jpcc.6b04473	journal	June 2016
Self-Limiting Oxides on WSe ₂ as Controlled Surface Acceptors and Low-Resistance Hole Contacts Yamamoto, Mahito; Nakaharai, Shu; Ueno, Keiji Nano Letters, Vol. 16, Issue 4 https://doi.org/10.1021/acs.nanolett.6b00390	journal	March 2016
MoS ₂ –Titanium Contact Interface Reactions McDonnell, Stephen; Smyth, Christopher; Hinkle, Christopher L. ACS Applied Materials & Interfaces, Vol. 8, Issue 12 https://doi.org/10.1021/acsami.6b00275	journal	March 2016
High-Mobility Holes in Dual-Gated WSe ₂ Field-Effect Transistors Movva, Hema C. P.; Rai, Amritesh; Kang, Sangwoo ACS Nano, Vol. 9, Issue 10 https://doi.org/10.1021/acsnano.5b04611	journal	September 2015
Air-Stable Surface Charge Transfer Doping of MoS ₂ by Benzyl Viologen Kiriya, Daisuke; Tosun, Mahmut; Zhao, Peida Journal of the American Chemical Society, Vol. 136, Issue 22 https://doi.org/10.1021/ja5033327	journal	May 2014
High-Performance Single Layered WSe₂ p-FETs with Chemically Doped Contacts Fang, Hui; Chuang, Steven; Chang, Ting Chia Nano Letters, Vol. 12, Issue 7, p. 3788-3792 https://doi.org/10.1021/nl301702r	journal	June 2012
Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe ₂ Field Effect Transistors Liu, Wei; Kang, Jiahao; Sarkar, Deblina Nano Letters, Vol. 13, Issue 5 https://doi.org/10.1021/nl304777e	journal	April 2013
Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium Fang, Hui; Tosun, Mahmut; Seol, Gyungseon Nano Letters, Vol. 13, Issue 5, p. 1991-1995 https://doi.org/10.1021/nl400044m	journal	April 2013
High Mobility WSe ₂ p - and n - Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts Chuang, Hsun-Jen; Tan, Xuebin; Ghimire, Nirmal Jeevi Nano Letters, Vol. 14, Issue 6 https://doi.org/10.1021/nl501275p	journal	May 2014
Doping against the Native Propensity of MoS ₂ : Degenerate Hole Doping by Cation Substitution Suh, Joonki; Park, Tae-Eon; Lin, Der-Yuh Nano Letters, Vol. 14, Issue 12 https://doi.org/10.1021/nl503251h	journal	November 2014
Large Area Growth and Electrical Properties of p-Type WSe ₂ Atomic Layers Zhou, Hailong; Wang, Chen; Shaw, Jonathan C. Nano Letters, Vol. 15, Issue 1 https://doi.org/10.1021/nl504256y	journal	December 2014
Evolution of Electronic Structure in Atomically Thin Sheets of WS ₂ and WSe ₂ Zhao, Weijie; Ghorannevis, Zohreh; Chu, Leiqiang ACS Nano, Vol. 7, Issue 1 https://doi.org/10.1021/nn305275h	journal	December 2012
Carrier Control of MoS ₂ Nanoflakes by Functional Self-Assembled Monolayers Li, Yang; Xu, Cheng-Yan; Hu, PingAn ACS Nano, Vol. 7, Issue 9 https://doi.org/10.1021/nn402682j	journal	August 2013
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides Jariwala, Deep; Sangwan, Vinod K.; Lauhon, Lincoln J. ACS Nano, Vol. 8, Issue 2 https://doi.org/10.1021/nn500064s	journal	January 2014
High-Gain Inverters Based on WSe ₂ Complementary Field-Effect Transistors Tosun, Mahmut; Chuang, Steven; Fang, Hui ACS Nano, Vol. 8, Issue 5 https://doi.org/10.1021/nn5009929	journal	April 2014
High-Performance Chemical Sensing Using Schottky-Contacted Chemical Vapor Deposition Grown Monolayer MoS ₂ Transistors Liu, Bilu; Chen, Liang; Liu, Gang ACS Nano, Vol. 8, Issue 5 https://doi.org/10.1021/nn5015215	journal	April 2014
Hole Contacts on Transition Metal Dichalcogenides: Interface Chemistry and Band Alignments McDonnell, Stephen; Azcatl, Angelica; Addou, Rafik ACS Nano, Vol. 8, Issue 6 https://doi.org/10.1021/nn501728w	journal	May 2014
Air Stable p-Doping of WSe ₂ by Covalent Functionalization Zhao, Peida; Kiriya, Daisuke; Azcatl, Angelica ACS Nano, Vol. 8, Issue 10 https://doi.org/10.1021/nn5047844	journal	September 2014
Hopping transport through defect-induced localized states in molybdenum disulphide Qiu, Hao; Xu, Tao; Wang, Zilu Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms3642	journal	October 2013
Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics Cheng, Rui; Jiang, Shan; Chen, Yu Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms6143	journal	October 2014
Two-dimensional flexible nanoelectronics Akinwande, Deji; Petrone, Nicholas; Hone, James Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms6678	journal	December 2014
Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus Xiang, Du; Han, Cheng; Wu, Jing Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms7485	journal	March 2015
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712 https://doi.org/10.1038/nnano.2012.193	journal	November 2012
Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2 Zhang, Yi; Chang, Tay-Rong; Zhou, Bo Nature Nanotechnology, Vol. 9, Issue 2 https://doi.org/10.1038/nnano.2013.277	journal	December 2013
Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide Baugher, Britton W. H.; Churchill, Hugh O. H.; Yang, Yafang Nature Nanotechnology, Vol. 9, Issue 4 https://doi.org/10.1038/nnano.2014.25	journal	March 2014
Charge-transfer-based Gas Sensing Using Atomic-layer MoS2 Cho, Byungjin; Hahm, Myung Gwan; Choi, Minseok Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep08052	journal	January 2015
Superconductivity Series in Transition Metal Dichalcogenides by Ionic Gating Shi, Wu; Ye, Jianting; Zhang, Yijin Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep12534	journal	August 2015
Control of Radiative Exciton Recombination by Charge Transfer Induced Surface Dipoles in MoS2 and WS2 Monolayers Hu, Peng; Ye, Jun; He, Xuexia Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep24105	journal	April 2016
Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: enabling nanoscale direct write homo-junctions Stanford, Michael G.; Pudasaini, Pushpa Raj; Belianinov, Alex Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep27276	journal	June 2016
Physical and chemical tuning of two-dimensional transition metal dichalcogenides Wang, Haotian; Yuan, Hongtao; Sae Hong, Seung Chemical Society Reviews, Vol. 44, Issue 9 https://doi.org/10.1039/C4CS00287C	journal	January 2015
Effect of oxygen and ozone on p-type doping of ultra-thin WSe ₂ and MoSe ₂ field effect transistors Wang, Shunfeng; Zhao, Weijie; Giustiniano, Francesco Physical Chemistry Chemical Physics, Vol. 18, Issue 6 https://doi.org/10.1039/C5CP07194A	journal	January 2016
Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects Schmidt, Hennrik; Giustiniano, Francesco; Eda, Goki Chemical Society Reviews, Vol. 44, Issue 21 https://doi.org/10.1039/C5CS00275C	journal	January 2015
Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Charge transfer correction term for the electron affinity rule Schlaf, R.; Lang, O.; Pettenkofer, C. Journal of Applied Physics, Vol. 85, Issue 5 https://doi.org/10.1063/1.369590	journal	March 1999
Stable few-layer MoS ₂ rectifying diodes formed by plasma-assisted doping Chen, Mikai; Nam, Hongsuk; Wi, Sungjin Applied Physics Letters, Vol. 103, Issue 14 https://doi.org/10.1063/1.4824205	journal	September 2013
Giant reversible, facet-dependent, structural changes in a correlated-electron insulator induced by ionic liquid gating Jeong, Jaewoo; Aetukuri, Nagaphani B.; Passarello, Donata Proceedings of the National Academy of Sciences, Vol. 112, Issue 4 https://doi.org/10.1073/pnas.1419051112	journal	January 2015
Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H- M X 2 semiconductors ( M = Mo, W; X = S, Se, Te) Yun, Won Seok; Han, S. W.; Hong, Soon Cheol Physical Review B, Vol. 85, Issue 3 https://doi.org/10.1103/PhysRevB.85.033305	journal	January 2012
Possible doping strategies for MoS 2 monolayers: An ab initio study Dolui, Kapildeb; Rungger, Ivan; Das Pemmaraju, Chaitanya Physical Review B, Vol. 88, Issue 7 https://doi.org/10.1103/PhysRevB.88.075420	journal	August 2013
Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe 2 Xi, Xiaoxiang; Berger, Helmuth; Forró, László Physical Review Letters, Vol. 117, Issue 10 https://doi.org/10.1103/PhysRevLett.117.106801	journal	August 2016
Electronic structure of transition metal dichalcogenides monolayers 1H-MX₂ (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors Kumar, A.; Ahluwalia, P. K. The European Physical Journal B, Vol. 85, Issue 6, Article No. 186 https://doi.org/10.1140/epjb/e2012-30070-x	journal	June 2012
A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors Cho, Ah-Jin; Park, Kee Chan; Kwon, Jang-Yeon Nanoscale Research Letters, Vol. 10, Issue 1 https://doi.org/10.1186/s11671-015-0827-1	journal	March 2015
Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance electronic devices. Ippolito, Stefano; Kelly, Adam G.; Furlan De Oliveira, Rafael Apollo - University of Cambridge Repository https://doi.org/10.17863/cam.72467	text	January 2021
Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2 Zhao, Weijie; Ghorannevis, Zohreh; Chua, Leiqiang arXiv https://doi.org/10.48550/arxiv.1212.5415	text	January 2012
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides Jariwala, Deep; Sangwan, Vinod K.; Lauhon, Lincoln J. arXiv https://doi.org/10.48550/arxiv.1402.0047	text	January 2014

Cited By (15)

Recent Advances in Ambipolar Transistors for Functional Applications Ren, Yi; Yang, Xiaoyang; Zhou, Li Advanced Functional Materials, Vol. 29, Issue 40 https://doi.org/10.1002/adfm.201902105	journal	July 2019
Simultaneous Optical Tuning of Hole and Electron Transport in Ambipolar WSe ₂ Interfaced with a Bicomponent Photochromic Layer: From High‐Mobility Transistors to Flexible Multilevel Memories Qiu, Haixin; Liu, Zhaoyang; Yao, Yifan Advanced Materials, Vol. 32, Issue 11 https://doi.org/10.1002/adma.201907903	journal	January 2020
Impact of Post-Lithography Polymer Residue on the Electrical Characteristics of MoS ₂ and WSe ₂ Field Effect Transistors Liang, Jierui; Xu, Ke; Toncini, Blaec Advanced Materials Interfaces, Vol. 6, Issue 3 https://doi.org/10.1002/admi.201801321	journal	December 2018
Significantly Increased Photoresponsivity of WSe ₂ ‐Based Transistors through Hybridization with Gold‐Tetraphenylporphyrin as Efficient n ‐Type Dopant Lee, Dong Seop; Kim, Jun Young; Shin, Dae Yong Advanced Electronic Materials, Vol. 5, Issue 4 https://doi.org/10.1002/aelm.201800802	journal	February 2019
The ambipolar transport behavior of WSe2 transistors and its analogue circuits Wang, Zegao; Li, Qiang; Chen, Yuanfu NPG Asia Materials, Vol. 10, Issue 8 https://doi.org/10.1038/s41427-018-0062-1	journal	August 2018
All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration Sivan, Maheswari; Li, Yida; Veluri, Hasita Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-13176-4	journal	November 2019
Insulators for 2D nanoelectronics: the gap to bridge Illarionov, Yury Yu.; Knobloch, Theresia; Jech, Markus Nature Communications, Vol. 11, Issue 1 https://doi.org/10.1038/s41467-020-16640-8	journal	July 2020
A WSe ₂ vertical field emission transistor Di Bartolomeo, Antonio; Urban, Francesca; Passacantando, Maurizio Nanoscale, Vol. 11, Issue 4 https://doi.org/10.1039/c8nr09068h	journal	January 2019
Dose-dependent effect of proton irradiation on electrical properties of WSe ₂ ambipolar field effect transistors Shin, Jiwon; Cho, Kyungjune; Kim, Tae-Young Nanoscale, Vol. 11, Issue 29 https://doi.org/10.1039/c9nr03345a	journal	January 2019
High performance top-gated multilayer WSe ₂ field effect transistors Pudasaini, Pushpa Raj; Stanford, Michael G.; Oyedele, Akinola Nanotechnology, Vol. 28, Issue 47 https://doi.org/10.1088/1361-6528/aa8081	journal	October 2017
Tuning the electrical properties of WSe 2 via O 2 plasma oxidation: towards lateral homojunctions Hoffman, Anna N.; Stanford, Michael G.; Sales, Maria Gabriela 2D Materials, Vol. 6, Issue 4 https://doi.org/10.1088/2053-1583/ab2fa7	journal	July 2019
Exciton-polaritons in multilayer WSe ₂ in a planar microcavity Król, Mateusz; Rechcińska, Katarzyna; Nogajewski, Karol 2D Materials, Vol. 7, Issue 1 https://doi.org/10.1088/2053-1583/ab4b14	journal	October 2019
Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistors Seo, Junseok; Cho, Kyungjune; Lee, Woocheol Nanoscale Research Letters, Vol. 14, Issue 1 https://doi.org/10.1186/s11671-019-3137-1	journal	September 2019
Insulators for 2D nanoelectronics: the gap to bridge Illarionov, Yury Yu.; Knobloch, Theresia; Jech, Markus RWTH Aachen University https://doi.org/10.18154/rwth-2020-07464	text	January 2020
Exciton-polaritons in multilayer WSe$_2$ in a planar microcavity Król, M.; Rechcińska, K.; Nogajewski, K. arXiv https://doi.org/10.48550/arxiv.1908.05300	text	January 2019

Similar Records

Current fluctuation of electron and hole carriers in multilayer WSe{sub 2} field effect transistors

Journal Article · Sun Dec 13 23:00:00 EST 2015 · Applied Physics Letters · OSTI ID:22486234

Low Resistance Contact to P-Type Monolayer WSe₂

Journal Article · Mon May 06 20:00:00 EDT 2024 · Nano Letters · OSTI ID:2473043

Related Subjects

36 MATERIALS SCIENCE
carrier control
carrier mobility
field-effect transistors
plasma treatment
transition metal dichalcogenide