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Title: Flux growth in a horizontal configuration: An analog to vapor transport growth

Abstract

Flux growth of single crystals is normally performed in a vertical configuration with an upright refractory container holding the flux melt. At high temperatures, flux dissolves the charge, forming a homogeneous solution before nucleation and growth of crystals takes place under proper supersaturation generated by cooling or evaporating the flux. In this paper, we report flux growth in a horizontal configuration with a temperature gradient along the horizontal axis: a liquid transport growth analogous to the vapor transport technique. In a typical liquid transport growth, the charge is kept at the hot end of the refractory container and the flux melt dissolves the charge and transfers it to the cold end. Once the concentration of charge is above the solubility limit at the cold end, the thermodynamically stable phase nucleates and grows. Compared to the vertical flux growth, the liquid transport growth can provide a large quantity of crystals in a single growth since the charge/flux ratio is not limited by the solubility limit at the growth temperature. This technique is complementary to the vertical flux growth and can be considered when a large amount of crystals is needed but the yield from the conventional vertical flux growth is limited.more » Finally, we applied this technique to the growth of IrSb 3, Mo 3Sb 7, and MnBi from self-flux, and the growth of FeSe, CrTe 3, NiPSe 3, FePSe 3, CuInP 2S 6, RuCl 3, and OsCl 4 from a halide flux.« less

Authors:
 [1];  [1];  [2];  [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States). Aerospace Systems Directorate; UES, Inc., Beavercreek, OH (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); US Air Force Office of Scientific Research (AFOSR); National Research Council (United States)
Contributing Org.:
UES, Inc., Beavercreek, OH (United States)
OSTI Identifier:
1376471
Alternate Identifier(s):
OSTI ID: 1368428
Grant/Contract Number:
AC05-00OR22725; 14RQ08COR
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 1; Journal Issue: 2; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; crystal growth; crystallization

Citation Formats

Yan, J. -Q., Sales, B. C., Susner, M. A., and McGuire, M. A.. Flux growth in a horizontal configuration: An analog to vapor transport growth. United States: N. p., 2017. Web. doi:10.1103/PhysRevMaterials.1.023402.
Yan, J. -Q., Sales, B. C., Susner, M. A., & McGuire, M. A.. Flux growth in a horizontal configuration: An analog to vapor transport growth. United States. doi:10.1103/PhysRevMaterials.1.023402.
Yan, J. -Q., Sales, B. C., Susner, M. A., and McGuire, M. A.. Wed . "Flux growth in a horizontal configuration: An analog to vapor transport growth". United States. doi:10.1103/PhysRevMaterials.1.023402.
@article{osti_1376471,
title = {Flux growth in a horizontal configuration: An analog to vapor transport growth},
author = {Yan, J. -Q. and Sales, B. C. and Susner, M. A. and McGuire, M. A.},
abstractNote = {Flux growth of single crystals is normally performed in a vertical configuration with an upright refractory container holding the flux melt. At high temperatures, flux dissolves the charge, forming a homogeneous solution before nucleation and growth of crystals takes place under proper supersaturation generated by cooling or evaporating the flux. In this paper, we report flux growth in a horizontal configuration with a temperature gradient along the horizontal axis: a liquid transport growth analogous to the vapor transport technique. In a typical liquid transport growth, the charge is kept at the hot end of the refractory container and the flux melt dissolves the charge and transfers it to the cold end. Once the concentration of charge is above the solubility limit at the cold end, the thermodynamically stable phase nucleates and grows. Compared to the vertical flux growth, the liquid transport growth can provide a large quantity of crystals in a single growth since the charge/flux ratio is not limited by the solubility limit at the growth temperature. This technique is complementary to the vertical flux growth and can be considered when a large amount of crystals is needed but the yield from the conventional vertical flux growth is limited. Finally, we applied this technique to the growth of IrSb3, Mo3Sb7, and MnBi from self-flux, and the growth of FeSe, CrTe3, NiPSe3, FePSe3, CuInP2S6, RuCl3, and OsCl4 from a halide flux.},
doi = {10.1103/PhysRevMaterials.1.023402},
journal = {Physical Review Materials},
number = 2,
volume = 1,
place = {United States},
year = {Wed Jul 05 00:00:00 EDT 2017},
month = {Wed Jul 05 00:00:00 EDT 2017}
}

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