Flux growth in a horizontal configuration: An analog to vapor transport growth

Yan, J. -Q.; Sales, B. C.; Susner, M. A.; McGuire, M. A.

doi:10.1103/PhysRevMaterials.1.023402

Title: Flux growth in a horizontal configuration: An analog to vapor transport growth

Journal Article · Wed Jul 05 00:00:00 EDT 2017 · Physical Review Materials

DOI:https://doi.org/10.1103/PhysRevMaterials.1.023402· OSTI ID:1376471

Yan, J. -Q. ^[1]; Sales, B. C. ^[1]; Susner, M. A. ^[2]; McGuire, M. A. ^[1]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States). Aerospace Systems Directorate; UES, Inc., Beavercreek, OH (United States)

Flux growth of single crystals is normally performed in a vertical configuration with an upright refractory container holding the flux melt. At high temperatures, flux dissolves the charge, forming a homogeneous solution before nucleation and growth of crystals takes place under proper supersaturation generated by cooling or evaporating the flux. In this paper, we report flux growth in a horizontal configuration with a temperature gradient along the horizontal axis: a liquid transport growth analogous to the vapor transport technique. In a typical liquid transport growth, the charge is kept at the hot end of the refractory container and the flux melt dissolves the charge and transfers it to the cold end. Once the concentration of charge is above the solubility limit at the cold end, the thermodynamically stable phase nucleates and grows. Compared to the vertical flux growth, the liquid transport growth can provide a large quantity of crystals in a single growth since the charge/flux ratio is not limited by the solubility limit at the growth temperature. This technique is complementary to the vertical flux growth and can be considered when a large amount of crystals is needed but the yield from the conventional vertical flux growth is limited. Finally, we applied this technique to the growth of IrSb₃, Mo₃Sb₇, and MnBi from self-flux, and the growth of FeSe, CrTe₃, NiPSe₃, FePSe₃, CuInP₂S₆, RuCl₃, and OsCl₄ from a halide flux.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); US Air Force Office of Scientific Research (AFOSR); National Research Council (United States)

Contributing Organization:: UES, Inc., Beavercreek, OH (United States)

Grant/Contract Number:: AC05-00OR22725; 14RQ08COR

OSTI ID:: 1376471

Alternate ID(s):: OSTI ID: 1368428

Journal Information:: Physical Review Materials, Vol. 1, Issue 2; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 36 works

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Unusual effects of Be doping in the iron-based superconductor FeSe Kim, J. S.; VanGennep, D.; Hamlin, J. J. Journal of Physics: Condensed Matter, Vol. 30, Issue 44 https://doi.org/10.1088/1361-648x/aae3cf	journal	October 2018
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