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Title: Fabrication of hard x-ray zone plates with high aspect ratio using metal-assisted chemical etching

Authors:
; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1375484
Grant/Contract Number:
AC02-06CH11357
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Additional Journal Information:
Journal Volume: 35; Journal Issue: 6; Related Information: CHORUS Timestamp: 2018-02-14 21:17:31; Journal ID: ISSN 2166-2746
Publisher:
American Vacuum Society/AIP
Country of Publication:
United States
Language:
English

Citation Formats

Li, Kenan, Wojcik, Michael J., Divan, Ralu, Ocola, Leonidas E., Shi, Bing, Rosenmann, Daniel, and Jacobsen, Chris. Fabrication of hard x-ray zone plates with high aspect ratio using metal-assisted chemical etching. United States: N. p., 2017. Web. doi:10.1116/1.4991794.
Li, Kenan, Wojcik, Michael J., Divan, Ralu, Ocola, Leonidas E., Shi, Bing, Rosenmann, Daniel, & Jacobsen, Chris. Fabrication of hard x-ray zone plates with high aspect ratio using metal-assisted chemical etching. United States. doi:10.1116/1.4991794.
Li, Kenan, Wojcik, Michael J., Divan, Ralu, Ocola, Leonidas E., Shi, Bing, Rosenmann, Daniel, and Jacobsen, Chris. 2017. "Fabrication of hard x-ray zone plates with high aspect ratio using metal-assisted chemical etching". United States. doi:10.1116/1.4991794.
@article{osti_1375484,
title = {Fabrication of hard x-ray zone plates with high aspect ratio using metal-assisted chemical etching},
author = {Li, Kenan and Wojcik, Michael J. and Divan, Ralu and Ocola, Leonidas E. and Shi, Bing and Rosenmann, Daniel and Jacobsen, Chris},
abstractNote = {},
doi = {10.1116/1.4991794},
journal = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},
number = 6,
volume = 35,
place = {United States},
year = 2017,
month = 8
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on August 17, 2018
Publisher's Accepted Manuscript

Citation Metrics:
Cited by: 1work
Citation information provided by
Web of Science

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  • Metal assisted chemical etching (MacEtch) is a recently developed anisotropic wet etching method that is capable of producing high aspect ratio semiconductor nanostructures from patterned metal film. In this review article, we highlight the characteristics of MacEtch of silicon (Si) including controllability of the produced sidewall roughness, the inherent high aspect ratio, the weak crystal orientation dependence, impurity doping and solution concentration dependent porosity, as well as the applicability of MacEtch to non-Si based semiconductor materials including III-V compound semiconductors. Also reviewed are applications of MacEtch produced high aspect ratio Si nanostructures in photovoltaics, where the p-n junction can bemore » in the planar Si tray, core-shell, or axial geometry, with nanowire, micropillar, or hole arrays serving as light trapping or carrier collection structures. The prospect of using MacEtch to improve the cost and efficiency of photovoltaic cells is discussed. (c) 2011 Elsevier Ltd. All rights reserved.« less
  • We demonstrate a low pressure reactive ion etching process capable of patterning nanometer scale angled sidewalls and three dimensional structures in photoresist. At low pressure the plasma has a large dark space region where the etchant ions have very large highly-directional mean free paths. Mounting the sample entirely within this dark space allows for etching at angles relative to the cathode with minimal undercutting, resulting in high-aspect ratio nanometer scale angled features. By reversing the initial angle and performing a second etch we create three-dimensional mask profiles.
  • No abstract prepared.
  • We have fabricated very-high-aspect-ratio (VHAR) silicon and metal microstructures in complex geometric patterns. The recently developed surfactant-added tetramethylammonium hydroxide etching allows the formation of V-grooves in any pattern, i.e., not limited by the crystal direction, on a silicon surface. As the resulting sharp pits allow very deep photoelectrochemical etching, VHAR silicon microstructures (4-mu m-wide and over-300-mu m-deep trenches) are successfully fabricated in complex patterns (spiral and zigzag demonstrated), overcoming the prevailing limitations of simple pores and straight trenches. Furthermore, by filling the VHAR silicon mold with nickel and removing the silicon, high-aspect-ratio metal microstructures of complex patterns are also obtained.more » These VHAR microstructures in complex patterns, which are structurally much stronger than the simple posts and straight plates, overcome the stiction problem even when densely populated. [2012-0042]« less
  • We report on the formation of ultra-high aspect ratio nanopores in silicon bulk material using photo-assisted electrochemical etching. Here, n-type silicon is used as anode in contact with hydrofluoric acid. Based on the local dissolution of surface atoms in pre-defined etching pits, pore growth and pore diameter are, respectively, driven and controlled by the supply of minority charge carriers generated by backside illumination. Thus, arrays with sub-100 nm wide pores were fabricated. Similar to macropore etching, it was found that the pore diameter is proportional to the etching current, i.e., smaller etching currents result in smaller pore diameters. To find themore » limits under which nanopores with controllable diameter still can be obtained, etching was performed at very low current densities (several μA cm{sup −2}). By local etching, straight nanopores with aspect ratios above 1000 (∼19 μm deep and ∼15 nm pore tip diameter) were achieved. However, inherent to the formation of such narrow pores is a radius of curvature of a few nanometers at the pore tip, which favors electrical breakdown resulting in rough pore wall morphologies. Lowering the applied bias is adequate to reduce spiking pores but in most cases also causes etch stop. Our findings on bulk silicon provide a realistic chance towards sub-10 nm pore arrays on silicon membranes, which are of great interest for molecular filtering and possibly DNA sequencing.« less