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Title: Large Modulation of Charge Carrier Mobility in Doped Nanoporous Organic Transistors

Abstract

Molecular doping of organic electronics has shown promise to sensitively modulate important device metrics. One critical challenge is the disruption of structure order upon doping of highly crystalline organic semiconductors, which significantly reduces the charge carrier mobility. This paper demonstrates a new method to achieve large modulation of charge carrier mobility via channel doping without disrupting the molecular ordering. Central to the method is the introduction of nanopores into the organic semiconductor thin films via a simple and robust templated meniscus-guided coating method. Using this method, the charge carrier mobility of C8-benzothieno[3,2-b]benzothiophene transistors is boosted by almost sevenfold. This paper further demonstrates enhanced electron transport by close to an order of magnitude in a diketopyrrolopyrrole-based donor–acceptor polymer. Combining spectroscopic measurements, density functional theory calculations, and electrical characterizations, the doping mechanism is identified as partial-charge-transfer induced trap filling. The nanopores serve to enhance the dopant/organic semiconductor charge transfer reaction by exposing the π-electrons to the pore wall.

Authors:
 [1];  [2];  [1];  [1]; ORCiD logo [1]
  1. Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA
  2. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 P. R. China
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
USDOE
OSTI Identifier:
1375357
Resource Type:
Journal Article
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 29; Journal Issue: 27; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
ENGLISH
Subject:
36 MATERIALS SCIENCE

Citation Formats

Zhang, Fengjiao, Dai, Xiaojuan, Zhu, Weikun, Chung, Hyunjoong, and Diao, Ying. Large Modulation of Charge Carrier Mobility in Doped Nanoporous Organic Transistors. United States: N. p., 2017. Web. doi:10.1002/adma.201700411.
Zhang, Fengjiao, Dai, Xiaojuan, Zhu, Weikun, Chung, Hyunjoong, & Diao, Ying. Large Modulation of Charge Carrier Mobility in Doped Nanoporous Organic Transistors. United States. doi:10.1002/adma.201700411.
Zhang, Fengjiao, Dai, Xiaojuan, Zhu, Weikun, Chung, Hyunjoong, and Diao, Ying. Wed . "Large Modulation of Charge Carrier Mobility in Doped Nanoporous Organic Transistors". United States. doi:10.1002/adma.201700411.
@article{osti_1375357,
title = {Large Modulation of Charge Carrier Mobility in Doped Nanoporous Organic Transistors},
author = {Zhang, Fengjiao and Dai, Xiaojuan and Zhu, Weikun and Chung, Hyunjoong and Diao, Ying},
abstractNote = {Molecular doping of organic electronics has shown promise to sensitively modulate important device metrics. One critical challenge is the disruption of structure order upon doping of highly crystalline organic semiconductors, which significantly reduces the charge carrier mobility. This paper demonstrates a new method to achieve large modulation of charge carrier mobility via channel doping without disrupting the molecular ordering. Central to the method is the introduction of nanopores into the organic semiconductor thin films via a simple and robust templated meniscus-guided coating method. Using this method, the charge carrier mobility of C8-benzothieno[3,2-b]benzothiophene transistors is boosted by almost sevenfold. This paper further demonstrates enhanced electron transport by close to an order of magnitude in a diketopyrrolopyrrole-based donor–acceptor polymer. Combining spectroscopic measurements, density functional theory calculations, and electrical characterizations, the doping mechanism is identified as partial-charge-transfer induced trap filling. The nanopores serve to enhance the dopant/organic semiconductor charge transfer reaction by exposing the π-electrons to the pore wall.},
doi = {10.1002/adma.201700411},
journal = {Advanced Materials},
issn = {0935-9648},
number = 27,
volume = 29,
place = {United States},
year = {2017},
month = {5}
}

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