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Large Modulation of Charge Carrier Mobility in Doped Nanoporous Organic Transistors

Journal Article · · Advanced Materials
 [1];  [2];  [1];  [1];  [1]
  1. Univ. of Illinois at Urbana-Champaign, IL (United States). Dept. of Chemical and Biomolecular Engineering
  2. Chinese Academy of Sciences (CAS), Beijing (China). Beijing National Lab. for Molecular Sciences. Inst. of Chemistry

Molecular doping of organic electronics has shown promise to sensitively modulate important device metrics. One critical challenge is the disruption of structure order upon doping of highly crystalline organic semiconductors, which significantly reduces the charge carrier mobility. This paper demonstrates a new method to achieve large modulation of charge carrier mobility via channel doping without disrupting the molecular ordering. Central to the method is the introduction of nanopores into the organic semiconductor thin films via a simple and robust templated meniscus-guided coating method. Using this method, the charge carrier mobility of C8-benzothieno[3,2-b]benzothiophene transistors is boosted by almost sevenfold. This paper further demonstrates enhanced electron transport by close to an order of magnitude in a diketopyrrolopyrrole-based donor–acceptor polymer. Combining spectroscopic measurements, density functional theory calculations, and electrical characterizations, the doping mechanism is identified as partial-charge-transfer induced trap filling. The nanopores serve to enhance the dopant/organic semiconductor charge transfer reaction by exposing the π-electrons to the pore wall.

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1375357
Journal Information:
Advanced Materials, Journal Name: Advanced Materials Journal Issue: 27 Vol. 29; ISSN 0935-9648
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
ENGLISH

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