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Title: Epitaxial hexagonal materials on IBAD-textured substrates

Abstract

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.

Inventors:
;
Publication Date:
Research Org.:
iBeam Materials, Inc., Santa Fe, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1375205
Patent Number(s):
9,735,318
Application Number:
15/041,017
Assignee:
iBeam Materials, Inc. ARPA-E
DOE Contract Number:  
AR0000447
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Feb 10
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Matias, Vladimir, and Yung, Christopher. Epitaxial hexagonal materials on IBAD-textured substrates. United States: N. p., 2017. Web.
Matias, Vladimir, & Yung, Christopher. Epitaxial hexagonal materials on IBAD-textured substrates. United States.
Matias, Vladimir, and Yung, Christopher. Tue . "Epitaxial hexagonal materials on IBAD-textured substrates". United States. doi:. https://www.osti.gov/servlets/purl/1375205.
@article{osti_1375205,
title = {Epitaxial hexagonal materials on IBAD-textured substrates},
author = {Matias, Vladimir and Yung, Christopher},
abstractNote = {A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 15 00:00:00 EDT 2017},
month = {Tue Aug 15 00:00:00 EDT 2017}
}

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