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Title: Epitaxial hexagonal materials on IBAD-textured substrates

Abstract

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.

Inventors:
;
Publication Date:
Research Org.:
iBeam Materials, Inc., Santa Fe, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1375205
Patent Number(s):
9,735,318
Application Number:
15/041,017
Assignee:
iBeam Materials, Inc. ARPA-E
DOE Contract Number:  
AR0000447
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Feb 10
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Matias, Vladimir, and Yung, Christopher. Epitaxial hexagonal materials on IBAD-textured substrates. United States: N. p., 2017. Web.
Matias, Vladimir, & Yung, Christopher. Epitaxial hexagonal materials on IBAD-textured substrates. United States.
Matias, Vladimir, and Yung, Christopher. Tue . "Epitaxial hexagonal materials on IBAD-textured substrates". United States. doi:. https://www.osti.gov/servlets/purl/1375205.
@article{osti_1375205,
title = {Epitaxial hexagonal materials on IBAD-textured substrates},
author = {Matias, Vladimir and Yung, Christopher},
abstractNote = {A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 15 00:00:00 EDT 2017},
month = {Tue Aug 15 00:00:00 EDT 2017}
}

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Works referenced in this record:

Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates
journal, April 2000

  • Bour, D. P.; Nickel, N. M.; Van de Walle, C. G.
  • Applied Physics Letters, Vol. 76, Issue 16, p. 2182-2184
  • DOI: 10.1063/1.126291

Materials science challenges for high-temperature superconducting wire
journal, September 2007

  • Foltyn, S. R.; Civale, L.; MacManus-Driscoll, J. L.
  • Nature Materials, Vol. 6, Issue 9, p. 631-642
  • DOI: 10.1038/nmat1989

Control of the crystalline quality of wurtzitic GaN films deposited on γ-LiAlO2 by ion-beam assisted molecular-beam epitaxy
journal, April 2007

  • Gerlach, J. W.; Hofmann, A.; Höche, T.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 257, Issue 1-2, p. 315-319
  • DOI: 10.1016/j.nimb.2007.01.025

Leveling effect of sol–gel SiO2 coatings onto metallic foil substrates
journal, April 2001

  • Guillén, C.; Martı́nez, M. A.; San Vicente, G.
  • Surface and Coatings Technology, Vol. 138, Issue 2-3, p. 205-210
  • DOI: 10.1016/S0257-8972(00)01134-8

Stacks of YBCO Films Using Multiple IBAD Templates
journal, June 2007

  • Hanisch, J.; Matias, V.; Rowley, J.
  • IEEE Transactions on Applied Superconductivity, Vol. 17, Issue 2, p. 3577-3580
  • DOI: 10.1109/TASC.2007.898948

The Surface Morphology of Ba0.65Sr0.35TiO3 Thin Film by Sol-Gel Method
journal, September 2005

  • Hu, Wencheng; Yang, Chuanren; Zhang, Wanli
  • Integrated Ferroelectrics, Vol. 72, Issue 1, p. 1-11
  • DOI: 10.1080/10584580500311539

Epitaxial growth of gallium nitride by ion-beam-assisted evaporation
journal, December 1995


Development of textured MgO templates on nonmetallic flexible ceraflex
journal, September 2006

  • Lu, Rongtao; Vallejo, Ronald N.; Fisher, Daniel W.
  • Applied Physics Letters, Vol. 89, Issue 13, Article No. 132505
  • DOI: 10.1063/1.2357849

Optimization of ion-atomic beam source for deposition of GaN ultrathin films
journal, August 2014

  • Mach, Jindřich; Šamořil, Tomáš; Kolíbal, Miroslav
  • Review of Scientific Instruments, Vol. 85, Issue 8, Article No. 083302
  • DOI: 10.1063/1.4892800

Ion beam induced crystalline texturing during thin film deposition
journal, February 2015


Very fast biaxial texture evolution using high rate ion-beam-assisted deposition of MgO
journal, January 2009

  • Matias, Vladimir; Hänisch, Jens; Rowley, E. John
  • Journal of Materials Research, Vol. 24, Issue 1, p. 125-129
  • DOI: 10.1557/JMR.2009.0036

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
journal, March 1994

  • Nakamura, Shuji; Mukai, Takashi; Senoh, Masayuki
  • Applied Physics Letters, Vol. 64, Issue 13, p. 1687-1689
  • DOI: 10.1063/1.111832

Solution deposition planarization of long-length flexible substrates
journal, February 2011

  • Sheehan, Chris; Jung, Yehyun; Holesinger, Terry
  • Applied Physics Letters, Vol. 98, Issue 7, Article No. 071907
  • DOI: 10.1063/1.3554754

Artificial Grain Alignment of Organic Crystalline Thin Films
journal, January 2008


Fundamentals of topographic substrate leveling
journal, June 1988

  • Stillwagon, L. E.; Larson, R. G.
  • Journal of Applied Physics, Vol. 63, Issue 11, p. 5251-5258
  • DOI: 10.1063/1.340388

Planarization of Substrate Topography by Spin Coating
journal, January 1987

  • Stillwagon, L. E.; Larson, R. G.; Taylor, G. N.
  • Journal of The Electrochemical Society, Vol. 134, Issue 8, p. 2030-2037
  • DOI: 10.1149/1.2100813

Ion Beam Assisted Texture Evolution during Thin Film Deposition of Metal Nitrides
journal, January 2000

  • Stritzker, Bernd; Gerlach, Jurgen W.; Six, Stephan
  • MRS Proceedings, Vol. 647
  • DOI: 10.1557/PROC-647-O9.1

Deposition of in-plane textured MgO on amorphous Si3N4 substrates by ion-beam-assisted deposition and comparisons with ion-beam-assisted deposited yttria-stabilized-zirconia
journal, November 1997

  • Wang, C. P.; Do, K. B.; Beasley, M. R.
  • Applied Physics Letters, Vol. 71, Issue 20, p. 2955-2957
  • DOI: 10.1063/1.120227