A Compact Low-Power Driver Array for VCSELs in 65-nm CMOS Technology
This article presents a compact low-power 4 x 10 Gb/s quad-driver module for Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays in a 65 nm CMOS technology. The side-by-side drivers can be directly wire bonded to the VCSEL diode array, supporting up to 4 channels. To increase the bandwidth of the driver, an internal feed-forward path is added for pole-zero cancellation, without increasing the power consumption. An edge-configurable pre-emphasis technique is proposed to achieve high bandwidth and minimize the asymmetry of the fall and rise times of the driver output current. Measurement results demonstrate a RMS jitter of 0.68 ps for 10 Gb/s operation. Tests demonstrate negligible crosstalk between channels. Under irradiation, the modulation amplitude degrades less than 5% up to 300 Mrad ionizing dose. Finally, the area of the quaddriver array is 500 μm by 1000 μm and the total power consumption for the entire driver array chip is 130 mW for the typical current setting.
- Research Organization:
- Southern Methodist Univ., Dallas, TX (United States)
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- SC0007830
- OSTI ID:
- 1374395
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 64, Issue 6; ISSN 0018-9499
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Power Efficient Current Driver Based on Negative Boosting for High-Speed Lasers
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journal | November 2019 |
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