Approaching the intrinsic photoluminescence linewidth in transition metal dichalcogenide monolayers

Ajayi, Obafunso A.; Ardelean, Jenny V.; Shepard, Gabriella D.; Wang, Jue; Antony, Abhinandan; Taniguchi, Takeshi; Watanabe, Kenji; Heinz, Tony F.; Strauf, Stefan; Zhu, X-Y; Hone, James C.

doi:10.1088/2053-1583/aa6aa1

Approaching the intrinsic photoluminescence linewidth in transition metal dichalcogenide monolayers

Journal Article · Mon Jul 24 00:00:00 EDT 2017 · 2D Materials

DOI:https://doi.org/10.1088/2053-1583/aa6aa1· OSTI ID:1374378

Ajayi, Obafunso A. ^[1]; Ardelean, Jenny V. ^[1]; Shepard, Gabriella D. ^[2]; Wang, Jue ^[1]; Antony, Abhinandan ^[1]; Taniguchi, Takeshi ^[3]; Watanabe, Kenji ^[3]; Heinz, Tony F. ^[4]; Strauf, Stefan ^[2]; Zhu, X-Y ^[1]; Hone, James C. ^[1]

Columbia Univ., New York, NY (United States)
Stevens Institute of Technology, Hoboken, NJ (United States)
National Institute for Materials Science, Tsukuba (Japan)
Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)

Excitonic states in monolayer transition metal dichalcogenides (TMDCs) have been the subject of extensive recent interest. Their intrinsic properties can, however, be obscured due to the influence of inhomogeneity in the external environment. Here we report methods for fabricating high quality TMDC monolayers with narrow photoluminescence (PL) linewidth approaching the intrinsic limit. We find that encapsulation in hexagonal boron nitride (h-BN) sharply reduces the PL linewidth, and that passivation of the oxide substrate by an alkyl monolayer further decreases the linewidth and also minimizes the charged exciton (trion) peak. The combination of these sample preparation methods results in much reduced spatial variation in the PL emission, with a full-width-at-half-maximum as low as 1.7 meV. Furthermore, analysis of the PL line shape yields a homogeneous width of 1.43 ± 0.08 meV and inhomogeneous broadening of 1.1 ± 0.3 meV.

View Accepted Manuscript (DOE)

Research Organization:: SLAC National Accelerator Lab., Menlo Park, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1374378

Journal Information:: 2D Materials, Journal Name: 2D Materials Journal Issue: 3 Vol. 4; ISSN 2053-1583

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Bright luminescence from indirect and strongly bound excitons in hBN Schue, Leonard; Sponza, Lorenzo; Plaud, Alexandre arXiv https://doi.org/10.48550/arxiv.1803.03766	text	January 2018
Virtual trions in the photoluminescence of monolayer transition-metal dichalcogenides Van Tuan, Dinh; Jones, Aaron M.; Yang, Min arXiv https://doi.org/10.48550/arxiv.1805.08722	text	January 2018
Coupling Quantum Emitters in WSe2 Monolayers to a Metal-Insulator-Metal Waveguide Dutta, Subhojit; Cai, Tao; Buyukkaya, Mustafa Atabey arXiv https://doi.org/10.48550/arxiv.1806.08973	text	January 2018
Fundamental exciton linewidth broadening in monolayer transition metal dichalcogenides Gupta, Garima; Majumdar, Kausik arXiv https://doi.org/10.48550/arxiv.1901.04391	text	January 2019
Controlling excitons in an atomically thin membrane with a mirror Zhou, You; Scuri, Giovanni; Sung, Jiho arXiv https://doi.org/10.48550/arxiv.1901.08500	text	January 2019
Integration of Single Photon Emitters in 2D Layered Materials with a Silicon Nitride Photonic Chip Peyskens, Frédéric; Chakraborty, Chitraleema; Muneeb, Muhammad arXiv https://doi.org/10.48550/arxiv.1904.08841	text	January 2019
Excitonic magneto-optics in monolayer transition metal dichalcogenides: From nanoribbons to two-dimensional response Have, J.; Peres, N. M. R.; Pedersen, T. G. arXiv https://doi.org/10.48550/arxiv.1905.06651	text	January 2019
Exciton-polaritons in multilayer WSe$_2$ in a planar microcavity Król, M.; Rechcińska, K.; Nogajewski, K. arXiv https://doi.org/10.48550/arxiv.1908.05300	text	January 2019
Magneto-optical Kerr effect in spin split two-dimensional massive Dirac materials Catarina, G.; Peres, N. M. R.; Fernández-Rossier, J. arXiv https://doi.org/10.48550/arxiv.1910.13371	text	January 2019
Zeeman Splitting and Inverted Polarization of Biexciton Emission in Monolayer WS2 Nagler, Philipp; Ballottin, Mariana V.; Mitioglu, Anatolie A. Universität Regensburg https://doi.org/10.5283/epub.39849	text	January 2018
Exciton broadening in WS2 /graphene heterostructures Hill, Heather M.; Rigosi, Albert F.; Raja, Archana Universität Regensburg https://doi.org/10.5283/epub.40515	text	January 2017
Colloquium : Excitons in atomically thin transition metal dichalcogenides Wang, Gang; Chernikov, Alexey; Glazov, Mikhail M. Universität Regensburg https://doi.org/10.5283/epub.40518	text	January 2018

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36 MATERIALS SCIENCE
line width
photoluminescence
transition metal dichalcogenides

Approaching the intrinsic photoluminescence linewidth in transition metal dichalcogenide monolayers

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