Computational Dissection of Two-Dimensional Rectangular Titanium Mononitride TiN: Auxetics and Promises for Photocatalysis
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Univ. of Science and Technology of China, Anhui (China)
- Queensland Univ. of Technology, Brisbane (Australia)
Recently, two-dimensional (2D) transition-metal nitrides have triggered an enormous interest for their tunable mechanical, optoelectronic, and magnetic properties, significantly enriching the family of 2D materials. Here, by using a broad range of first-principles calculations, we report a systematic study of 2D rectangular materials of titanium mononitride (TiN), exhibiting high energetic and thermal stability due to in-plane d–p orbital hybridization and synergetic out-of-plane electronic delocalization. The rectangular TiN monolayer also possesses enhanced auxeticity and ferroelasticity with an alternating order of Possion’s Ratios, stemming from the competitive interactions of intra- and inter- Ti—N chains. Such TiN nanosystem is a n-type metallic conductor with specific tunable pseudogaps. Halogenation of TiN monolayer downshifts the Fermi level, achieving the optical energy gap up to 1.85 eV for TiNCl(Br) sheet. Overall, observed electronic features suggest that the two materials are potential photocatalysts for water splitting application. Furthermore, these results extend emerging phenomena in a rich family 2D transition-metal-based materials and hint for a new platform for the next-generation functional nanomaterials.
- Research Organization:
- Los Alamos National Laboratory (LANL)
- Sponsoring Organization:
- LDRD; USDOE
- Grant/Contract Number:
- AC52-06NA25396
- OSTI ID:
- 1374357
- Report Number(s):
- LA-UR-17-23312
- Journal Information:
- Nano Letters, Journal Name: Nano Letters Journal Issue: 7 Vol. 17; ISSN 1530-6984
- Publisher:
- American Chemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Auxetic two-dimensional transition metal selenides and halides
Penta-SiCN: A Highly Auxetic Monolayer
Journal Article
·
Tue Oct 13 20:00:00 EDT 2020
· npj Computational Materials
·
OSTI ID:1766365
Penta-SiCN: A Highly Auxetic Monolayer
Journal Article
·
Mon Apr 18 20:00:00 EDT 2022
· ACS Applied Electronic Materials
·
OSTI ID:1868475