Methods for enhancing P-type doping in III-V semiconductor films

Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

Methods for enhancing P-type doping in III-V semiconductor films

Patent · Tue Aug 01 00:00:00 EDT 2017

OSTI ID:1373713

Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

Research Organization:: University of Utah Research Foundation, Salt Lake City, UT (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: FG02-04ER46148

Assignee:: University of Utah Research Foundation

Patent Number(s):: 9,721,810

Application Number:: 13/322,403

OSTI ID:: 1373713

Country of Publication:: United States

Language:: English

References (13)

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Enhanced cation-substituted p-type doping in GaP from dual surfactant effects Zhu, Junyi; Liu, Feng; Stringfellow, G. B. Journal of Crystal Growth, Vol. 312, Issue 2, p. 174-179 https://doi.org/10.1016/j.jcrysgro.2009.10.031	journal	January 2010
Sb and Bi surfactant effects on homo-epitaxy of GaAs on (001) patterned substrates Wixom, R. R.; Rieth, L. W.; Stringfellow, G. B. Journal of Crystal Growth, Vol. 265, Issue 3-4, p. 367-374 https://doi.org/10.1016/j.jcrysgro.2004.02.019	journal	May 2004
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Dual-Surfactant Effect to Enhance p -Type Doping in III-V Semiconductor Thin Films Zhu, J. Y.; Liu, Feng; Stringfellow, G. B. Physical Review Letters, Vol. 101, Issue 19, Article No. 196103 https://doi.org/10.1103/PhysRevLett.101.196103	journal	November 2008
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