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Title: Methods for enhancing P-type doping in III-V semiconductor films

Abstract

Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

Inventors:
; ;
Publication Date:
Research Org.:
University of Utah Research Foundation, Salt Lake City, UT (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1373713
Patent Number(s):
9,721,810
Application Number:
13/322,403
Assignee:
University of Utah Research Foundation
DOE Contract Number:  
FG02-04ER46148
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 Oct 28
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Liu, Feng, Stringfellow, Gerald, and Zhu, Junyi. Methods for enhancing P-type doping in III-V semiconductor films. United States: N. p., 2017. Web.
Liu, Feng, Stringfellow, Gerald, & Zhu, Junyi. Methods for enhancing P-type doping in III-V semiconductor films. United States.
Liu, Feng, Stringfellow, Gerald, and Zhu, Junyi. 2017. "Methods for enhancing P-type doping in III-V semiconductor films". United States. https://www.osti.gov/servlets/purl/1373713.
@article{osti_1373713,
title = {Methods for enhancing P-type doping in III-V semiconductor films},
author = {Liu, Feng and Stringfellow, Gerald and Zhu, Junyi},
abstractNote = {Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.},
doi = {},
url = {https://www.osti.gov/biblio/1373713}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {8}
}

Works referenced in this record:

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journal, November 2008


Effects of surfactants Sb and Bi on the incorporation of zinc and carbon in III/V materials grown by organometallic vapor-phase epitaxy
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Zn enhancement during surfactant-mediated growth of GaInP and GaP
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Layer-by-layer growth of Ag on Ag(111) induced by enhanced nucleation: A model study for surfactant-mediated growth
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Importance of the additional step-edge barrier in determining film morphology during epitaxial growth
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The use of a surfactant (Sb) to induce triple period ordering in GaInP
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Sb and Bi surfactant effects on homo-epitaxy of GaAs on (001) patterned substrates
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Surfactant effects on doping of GaAs grown by organometallic vapor phase epitaxy
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Generalized Electron Counting in Determination of Metal-Induced Reconstruction of Compound Semiconductor Surfaces
journal, September 2006


X-ray standing-wave study of an Sb-terminated GaAs(001)-(2×4) surface
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Spectroscopy of hydrogen‐related complexes in GaP:Zn
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