skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Methods for enhancing P-type doping in III-V semiconductor films

Patent ·
OSTI ID:1373713
; ;

Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

Research Organization:
University of Utah Research Foundation, Salt Lake City, UT (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-04ER46148
Assignee:
University of Utah Research Foundation
Patent Number(s):
9,721,810
Application Number:
13/322,403
OSTI ID:
1373713
Resource Relation:
Patent File Date: 2011 Oct 28
Country of Publication:
United States
Language:
English

References (28)

Smooth epitaxial compound films having a uniform thickness by vapor depositing on the (100) crystallographic plane of the substrate patent August 1964
Process for production of III-V compound epitaxial crystals patent August 1976
Method for Achieving Improved Epitaxy Quality (Surface Texture and Defect Density) on Free-Standing (Aluminum, Indium, Gallium) Nitride ((Al,In,Ga)N) Substrates for Opto-Electronic and Electronic Devices patent September 2002
Semiconductor optical device and method of manufacturing the same patent September 2003
Atomic hydrogen as a surfactant in production of highly strained InGaAs, InGaAsN, InGaAsNSb, and/or GaAsNSb quantum wells patent February 2005
Quantum dot tunable external cavity laser (QD-TEC laser) patent March 2005
Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers patent October 2006
Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material patent April 2013
Misfit dislocation forming interfacial self-assembly for growth of highly-mismatched III-SB alloys patent April 2013
GaN epitaxy with migration enhancement and surface energy modification patent September 2013
Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same patent-application September 2003
Use of surfactants to control unintentional dopant in semiconductors patent-application January 2007
Isoelectronic surfactant induced sublattice disordering in optoelectronic devices patent-application March 2007
Surfactant Assisted Growth in Barrier Layers In Inverted Metamorphic Multijunction Solar Cells patent-application March 2009
Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material patent-application July 2009
Dual-Surfactant Effect to Enhance p -Type Doping in III-V Semiconductor Thin Films journal November 2008
Effects of surfactants Sb and Bi on the incorporation of zinc and carbon in III/V materials grown by organometallic vapor-phase epitaxy journal August 2006
Zn enhancement during surfactant-mediated growth of GaInP and GaP journal January 2006
Enhanced cation-substituted p-type doping in GaP from dual surfactant effects journal January 2010
Surfactants in epitaxial growth journal August 1989
Layer-by-layer growth of Ag on Ag(111) induced by enhanced nucleation: A model study for surfactant-mediated growth journal August 1993
Importance of the additional step-edge barrier in determining film morphology during epitaxial growth journal May 1995
The use of a surfactant (Sb) to induce triple period ordering in GaInP journal March 2000
Sb and Bi surfactant effects on homo-epitaxy of GaAs on (001) patterned substrates journal May 2004
Surfactant effects on doping of GaAs grown by organometallic vapor phase epitaxy journal May 2001
Generalized Electron Counting in Determination of Metal-Induced Reconstruction of Compound Semiconductor Surfaces journal September 2006
X-ray standing-wave study of an Sb-terminated GaAs(001)-(2×4) surface journal July 1995
Spectroscopy of hydrogen‐related complexes in GaP:Zn journal October 1994

Similar Records

Generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate
Patent · Tue Dec 28 00:00:00 EST 2021 · OSTI ID:1373713
Carbon doping of III-V compound semiconductors
Thesis/Dissertation · Thu Sep 01 00:00:00 EDT 1994 · OSTI ID:1373713
Review Article: Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors
Journal Article · Thu Mar 30 00:00:00 EDT 2017 · Journal of Vacuum Science and Technology B · OSTI ID:1373713
+2 more

Related Subjects

36 MATERIALS SCIENCE