Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS2

Xiao, Zhiyong; Song, Jingfeng; Ferry, David K.; Ducharme, Stephen; Hong, Xia

doi:10.1103/PhysRevLett.118.236801

Title: Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer ${MoS}_{2}$

Journal Article · Thu Jun 08 00:00:00 EDT 2017 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.118.236801· OSTI ID:1400412

Xiao, Zhiyong ^[1]; Song, Jingfeng ^[1]; Ferry, David K. ^[2]; Ducharme, Stephen ^[1];

^[1]

Univ. of Nebraska-Lincoln, Lincoln, NE (United States)
Arizona State Univ., Tempe, AZ (United States)

Here, we exploit scanning probe controlled domain patterning in a ferroelectric top-layer to induce nonvolatile modulation of the conduction characteristic of monolayer MoS₂ between a transistor and a junction state. In the presence of a domain wall, MoS₂ exhibits rectified I-V that is well described by the thermionic emission model. The induced Schottky barrier height Φ^eff_Β varies from 0.38 eV to 0.57 eV and is tunabe by a SiO₂ global back-gate, while the tuning range of Φ^eff_Β the barrier height depends sensitively on the conduction band tail trapping states. Our work points to a new route to achieve programmable functionalities in van der Waals materials and sheds light on the critical performance limiting factors in these hybrid systems.

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Research Organization:: Univ. of Nebraska, Lincoln, NE (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0016153

OSTI ID:: 1400412

Alternate ID(s):: OSTI ID: 1372585

Journal Information:: Physical Review Letters, Vol. 118, Issue 23; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 49 works

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Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization Lv, Liang; Zhuge, Fuwei; Xie, Fengjun Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-11328-0	journal	July 2019
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Title: Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS 2

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Title: Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer ${MoS}_{2}$