High thermoelectric performance of n-type PbTe 1-y S y due to deep lying states induced by indium doping and spinodal decomposition

Zhang, Qian; Chere, Eyob Kebede; Wang, Yumei; Kim, Hee Seok; He, Ran; Cao, Feng; Dahal, Keshab; Broido, David; Chen, Gang; Ren, Zhifeng

doi:10.1016/j.nanoen.2016.02.040

High thermoelectric performance of n-type PbTe _1-y S _y due to deep lying states induced by indium doping and spinodal decomposition

Journal Article · Fri Apr 01 04:00:00 EDT 2016 · Nano Energy

DOI:https://doi.org/10.1016/j.nanoen.2016.02.040· OSTI ID:1371436

Zhang, Qian; Chere, Eyob Kebede; Wang, Yumei; Kim, Hee Seok; He, Ran; Cao, Feng; Dahal, Keshab; Broido, David; Chen, Gang; Ren, Zhifeng

Good thermoelectric materials should have high engineering figure-of-merit (ZT)_eng, not peak ZT, to achieve high conversion efficiency. In this work, we achieved a good (ZT)_eng by optimizing the carrier concentration to improve the room temperature ZT using deep lying dopant, indium, in PbTe _1-y S _y. It was found that a room temperature ZT as high as ~0.5 and a peak ZT ~1.1 at about 673 K were obtained in Pb_0.98In_0.02Te_0.8S_0.2 due to a lower thermal conductivity by alloy scattering and Spinodal decomposition. The calculated efficiency could be as high as ~12% at cold side 323 K and hot side 773 K. The approach is expected to work in other materials systems too.

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)

Sponsoring Organization:: USDOE SC Office of Basic Energy Sciences (SC-22)

DOE Contract Number:: SC0001299; SC0001299

OSTI ID:: 1371436

Journal Information:: Nano Energy, Journal Name: Nano Energy Journal Issue: C Vol. 22; ISSN 2211-2855

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

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High thermoelectric performance of n-type PbTe _1-y S _y due to deep lying states induced by indium doping and spinodal decomposition