High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity

Gao, Yuanda; Shiue, Ren-Jye; Gan, Xuetao; Li, Luozhou; Peng, Cheng; Meric, Inanc; Wang, Lei; Szep, Attila; Walker, Dennis; Hone, James; Englund, Dirk

doi:10.1021/nl504860z

High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity

Journal Article · Fri Feb 20 00:00:00 EST 2015 · Nano Letters

DOI:https://doi.org/10.1021/nl504860z· OSTI ID:1370895

Gao, Yuanda ^[1]; Shiue, Ren-Jye ^[2]; Gan, Xuetao ^[3]; Li, Luozhou ^[2]; Peng, Cheng ^[2]; Meric, Inanc ^[3]; Wang, Lei ^[1]; Szep, Attila ^[4]; Walker, Dennis ^[4]; Hone, James ^[1]; Englund, Dirk ^[2]

Columbia Univ., New York, NY (United States). Dept. of Mechanical Engineering
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Electrical Engineering and Computer Science
Columbia Univ., New York, NY (United States). Dept. of Electrical Engineering
Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States). Sensors Directorate

Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and interchip communications. Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption, and modulation depth. However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material for optoelectronic applications owing to its exceptional optical and electronic properties. We demonstrate a high-speed graphene electro-optic modulator based on a graphene-boron nitride (BN) heterostructure integrated with a silicon photonic crystal nanocavity. Strongly enhanced light-matter interaction of graphene in a submicron cavity enables efficient electrical tuning of the cavity reflection. We observe a modulation depth of 3.2 dB and a cutoff frequency of 1.2 GHz.

View Accepted Manuscript (DOE)

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Excitonics (CE); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: SC0001088

OSTI ID:: 1370895

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 3 Vol. 15; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
boron nitride
electro-optic modulator
graphene
optoelectronics
photonic crystal

High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity

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