Improved thermoelectric properties in heavily doped FeGa3

Ponnambalam, V.; Morelli, Donald T.

doi:10.1063/1.4938474

Title: Improved thermoelectric properties in heavily doped FeGa₃

Journal Article · Mon Dec 28 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4938474· OSTI ID:1370328

Ponnambalam, V. ^[1]; Morelli, Donald T. ^[1]

Michigan State Univ., East Lansing, MI (United States). Dept. of Chemical Engineering and Materials Science

FeGa₃, a hybridization gap semiconductor, has been substituted with an n-type dopant Ge to form a series of compositions FeGa_3-xGe_x. Electrical and thermal transport properties of these compositions have been studied. Change in carrier density (n) is evident from the Hall measurements. The carrier density (n) can be as high as ~10²¹ cm^-3 in these compositions. In order to study the role of heavy doping on the thermoelectric properties of FeGa₃, an alloy series Fe_1-yCo_yGa_3-xGe_x has also been synthesized with higher concentrations of Ge (x = 0.1–0.35) and Co (y = 0.1–0.5). From resistivity and Seebeck coefficient measurements, it appears that heavy doping is accomplished by the simultaneous substitutions of Ge and Co. The systematic change in both resistivity (ρ) and Seebeck coefficient (α) is possibly due to change in the carrier density (n). The power factor (PF) α²/ρ improves steadily with increasing carrier density and the best PF ~1.1 mW/m K² is observed for the heavily doped compositions at 875 K. In the alloy series Fe_1-yCo_yGa_3-xGe_x, thermal conductivity is also reduced substantially due to point defect scattering. Finally, due to higher power factors, the figure of merit ZT improves to 0.25 at 875 K for the heavily doped compositions.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Revolutionary Materials for Solid State Energy Conversion (RMSSEC)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0001054

OSTI ID:: 1370328

Journal Information:: Journal of Applied Physics, Vol. 118, Issue 24; Related Information: RMSSEC partners with Michigan State University (lead); University of California, Los Angeles; University of Michigan; Northwestern University; Oak Ridge National Laboratory; Ohio State University; Wayne State University; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 10 works

Citation information provided by
Web of Science

References (24)

Thermoelectric performance of intermetallic FeGa3 with Co doping Ramachandran, B.; Syu, K. Z.; Kuo, Y. K. Journal of Alloys and Compounds, Vol. 608 https://doi.org/10.1016/j.jallcom.2014.04.117	journal	September 2014
Evidence for a spin singlet state in the intermetallic semiconductor ${FeGa}_{3}$ Yin, Z. P.; Pickett, W. E. Physical Review B, Vol. 82, Issue 15 https://doi.org/10.1103/PhysRevB.82.155202	journal	October 2010
Ferromagnetic instability in a doped band gap semiconductor FeGa $_{3}$ Umeo, K.; Hadano, Y.; Narazu, S. Physical Review B, Vol. 86, Issue 14 https://doi.org/10.1103/PhysRevB.86.144421	journal	October 2012
Thermoelectric Materials, Phenomena, and Applications: A Bird's Eye View Tritt, Terry M.; Subramanian, M. A. MRS Bulletin, Vol. 31, Issue 3 https://doi.org/10.1557/mrs2006.44	journal	March 2006
Intermetallic solid solution Fe1−xCoxGa3: Synthesis, structure, NQR study and electronic band structure calculations Verchenko, V. Yu.; Likhanov, M. S.; Kirsanova, M. A. Journal of Solid State Chemistry, Vol. 194 https://doi.org/10.1016/j.jssc.2012.05.041	journal	October 2012
Thermodynamic and Transport Study of Electron- and Hole-Doped MGa3 Single Crystals (M = Fe, Co) Cabrera-Baez, M.; Magnavita, E. Thizay; Ribeiro, Raquel A. Journal of Electronic Materials, Vol. 43, Issue 6 https://doi.org/10.1007/s11664-013-2932-1	journal	December 2013
Electronic correlations in $Fe {Ga}_{3}$ and the effect of hole doping on its magnetic properties Gamża, M. B.; Tomczak, J. M.; Brown, C. Physical Review B, Vol. 89, Issue 19 https://doi.org/10.1103/PhysRevB.89.195102	journal	May 2014
Correlation effects in the small gap semiconductor FeGa ₃ Bittar, E. M.; Capan, C.; Seyfarth, G. Journal of Physics: Conference Series, Vol. 200, Issue 1 https://doi.org/10.1088/1742-6596/200/1/012014	journal	January 2010
Itinerant origin of the ferromagnetic quantum critical point in Fe(Ga,Ge) $_{3}$ Singh, David J. Physical Review B, Vol. 88, Issue 6 https://doi.org/10.1103/PhysRevB.88.064422	journal	August 2013
Electronic structures of semiconducting FeGa3, RuGa3, OsGa3, and RuIn3 with the CoGa3- or the FeGa3-type structure Imai, Yoji; Watanabe, Akio Intermetallics, Vol. 14, Issue 7 https://doi.org/10.1016/j.intermet.2005.10.013	journal	July 2006
Interplay between localized and itinerant magnetism in Co-substituted FeGa $_{3}$ Gippius, A. A.; Verchenko, V. Yu.; Tkachev, A. V. Physical Review B, Vol. 89, Issue 10 https://doi.org/10.1103/PhysRevB.89.104426	journal	March 2014
Electronic structure of ${FeSi}_{1 - x} {Ge}_{x}$ and ${FeGa}_{3}$ investigated by soft x-ray photoelectron spectroscopy complementary to x-ray emission spectroscopy Yamaoka, H.; Matsunami, M.; Eguchi, R. Physical Review B, Vol. 78, Issue 4 https://doi.org/10.1103/PhysRevB.78.045125	journal	July 2008
Phonon-drag effect in ${FeGa}_{3}$ Wagner-Reetz, Maik; Kasinathan, Deepa; Schnelle, Walter Physical Review B, Vol. 90, Issue 19 https://doi.org/10.1103/PhysRevB.90.195206	journal	November 2014
Effect of chemical doping on the thermoelectric properties of FeGa ₃ Haldolaarachchige, N.; Karki, A. B.; Phelan, W. Adam Journal of Applied Physics, Vol. 109, Issue 10 https://doi.org/10.1063/1.3585843	journal	May 2011
Materials for thermoelectric energy conversion Wood, C Reports on Progress in Physics, Vol. 51, Issue 4, p. 459-539 https://doi.org/10.1088/0034-4885/51/4/001	journal	April 1988
Metal Site Doping in the Narrow-Gap FeGa3 Semiconductor Kotur, B.; Babizhetskyy, V.; Bauer, E. Materials Science, Vol. 49, Issue 2 https://doi.org/10.1007/s11003-013-9601-7	journal	September 2013
Thermoelectric properties of semiconductorlike intermetallic compounds TMGa3 (TM=Fe, Ru, and Os) Amagai, Y.; Yamamoto, A.; Iida, T. Journal of Applied Physics, Vol. 96, Issue 10 https://doi.org/10.1063/1.1803947	journal	November 2004
Extrapolation of Transport Properties and Figure of Merit of a Thermoelectric Material Goldsmid, H.; Sharp, Jeff Energies, Vol. 8, Issue 7 https://doi.org/10.3390/en8076451	journal	June 2015
Disturbing the dimers: Electron and hole doping in the intermetallic insulator ${FeGa}_{3}$ Botana, Antia S.; Quan, Yundi; Pickett, Warren E. Physical Review B, Vol. 92, Issue 15 https://doi.org/10.1103/PhysRevB.92.155134	journal	October 2015
Effect of Carrier-Doping on the Thermoelectric Properties of Narrow-Bandgap (Fe,Ru)Ga3 Intermetallic Compounds Takagiwa, Y.; Matsuura, Y.; Kimura, K. Journal of Electronic Materials, Vol. 43, Issue 6 https://doi.org/10.1007/s11664-014-3008-6	journal	January 2014
Substitution Solid Solutions FeGa3−x E x and Their Thermoelectric Properties Wagner-Reetz, M.; Cardoso-Gil, R.; Grin, Yu. Journal of Electronic Materials, Vol. 43, Issue 6 https://doi.org/10.1007/s11664-013-2888-1	journal	December 2013
FeGa3 and RuGa3: Semiconducting Intermetallic Compounds Häussermann, Ulrich; Boström, Magnus; Viklund, Per Journal of Solid State Chemistry, Vol. 165, Issue 1 https://doi.org/10.1006/jssc.2001.9503	journal	April 2002
Electronic structure of a narrow-gap semiconductor FeGa $_{3}$ investigated by photoemission and inverse photoemission spectroscopies Arita, M.; Shimada, K.; Utsumi, Y. Physical Review B, Vol. 83, Issue 24 https://doi.org/10.1103/PhysRevB.83.245116	journal	June 2011
Observation of Energy Gap in FeGa ₃ Tsujii, Naohito; Yamaoka, Hitoshi; Matsunami, Masaharu Journal of the Physical Society of Japan, Vol. 77, Issue 2 https://doi.org/10.1143/JPSJ.77.024705	journal	February 2008

Cited By (1)

Single Crystal Growth of FeGa ₃ and FeGa _{3− x} Ge _x from High-Temperature Solution Using the Czochralski Method Bader, Kristian; Gille, Peter Crystal Research and Technology, Vol. 55, Issue 2 https://doi.org/10.1002/crat.201900067	journal	September 2019

Similar Records

Role of phonon scattering by elastic strain field in thermoelectric Sr{sub 1−x}Y{sub x}TiO{sub 3−δ}

Journal Article · Sat Jun 14 00:00:00 EDT 2014 · Journal of Applied Physics · OSTI ID:1370328

Mehdizadeh Dehkordi, A.; Tennakoon, S.; Adebisi, R.; +3 more

Aliovalent substitutions of the 2D layered semiconductor GeAs

Journal Article · Wed May 15 00:00:00 EDT 2019 · Journal of Solid State Chemistry · OSTI ID:1370328

Lee, Shannon; Owens-Baird, Bryan; Kovnir, Kirill

Thermoelectric properties of Fe and Al double substituted MnSi{sub γ} (γ~1.73)

Journal Article · Wed Jul 15 00:00:00 EDT 2015 · Journal of Solid State Chemistry · OSTI ID:1370328

Barczak, S. A.; Downie, R. A.; Popuri, S. R.; +3 more

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
36 MATERIALS SCIENCE

Title: Improved thermoelectric properties in heavily doped FeGa3

Citation Formats

References (24)

Cited By (1)

Similar Records

Related Subjects

Title: Improved thermoelectric properties in heavily doped FeGa₃