Quantifying Geometric Strain at the PbS QD-TiO2 Anode Interface and Its Effect on Electronic Structures
- Stanford Univ., CA (United States)
- Stanford Univ., CA (United States); National Inst. of Chemistry, Ljubljana (Slovenia)
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Univ. of Michigan, Ann Arbor, MI (United States)
Quantum dots (QDs) reflect promise as the absorber in nanostructured thin film solar cells, but achieving high device efficiencies requires surface treatments to minimize interfacial recombination. In this work, lead sulfide (PbS) QDs are grown on a mesoporous TiO2 film with a crystalline TiO2 surface, versus one coated with an amorphous TiO2 layer by atomic layer deposition (ALD). These mesoporous TiO2 films sensitized with PbS QDs are characterized by X-ray and electron diffraction, as well as X-ray absorption spectroscopy (XAS) in order to link XAS features with structural distortions in the PbS QDs. The XAS features are also analyzed with quantum simulations to probe the geometric and electronic structure of the PbS QD-TiO2 interface. We show that the anatase TiO2 surface structure induces PbS bond angle distortions, which increases the energy gap of the PbS QDs at the interface.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). Center on Nanostructuring for Efficient Energy Conversion (CNEEC)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- SC0001060
- OSTI ID:
- 1370023
- Alternate ID(s):
- OSTI ID: 1257394
- Journal Information:
- Nano Letters, Journal Name: Nano Letters Journal Issue: 12 Vol. 15; ISSN 1530-6984
- Publisher:
- American Chemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:1594489