A high-mobility electronic system at an electrolyte-gated oxide surface

Gallagher, Patrick; Lee, Menyoung; Petach, Trevor A.; Stanwyck, Sam W.; Williams, James R.; Watanabe, Kenji; Taniguchi, Takashi; Goldhaber-Gordon, David

doi:10.1038/ncomms7437

Title: A high-mobility electronic system at an electrolyte-gated oxide surface

Journal Article · Thu Mar 12 00:00:00 EDT 2015 · Nature Communications

DOI:https://doi.org/10.1038/ncomms7437· OSTI ID:1369990

Gallagher, Patrick ^[1];

^[1]; Petach, Trevor A. ^[1]; Stanwyck, Sam W. ^[1]; Williams, James R. ^[1];

^[2]; Taniguchi, Takashi ^[2]; Goldhaber-Gordon, David ^[1]

Stanford Univ., Stanford, CA (United States)
National Institute for Materials Science, Tsukuba (Japan)

Electrolyte gating is a powerful technique for accumulating large carrier densities at a surface. Yet this approach suffers from significant sources of disorder: electrochemical reactions can damage or alter the sample, and the ions of the electrolyte and various dissolved contaminants sit Angstroms from the electron system. Accordingly, electrolyte gating is well suited to studies of superconductivity and other phenomena robust to disorder, but of limited use when reactions or disorder must be avoided. Here we demonstrate that these limitations can be overcome by protecting the sample with a chemically inert, atomically smooth sheet of hexagonal boron nitride. We illustrate our technique with electrolyte-gated strontium titanate, whose mobility when protected with boron nitride improves more than 10-fold while achieving carrier densities nearing 10¹⁴ cm^–2. In conclusion, our technique is portable to other materials, and should enable future studies where high carrier density modulation is required but electrochemical reactions and surface disorder must be minimized.

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Research Organization:: Energy Frontier Research Centers (EFRC), Washington, D.C. (United States). Center on Nanostructuring for Efficient Energy Conversion (CNEEC)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0001060

OSTI ID:: 1369990

Journal Information:: Nature Communications, Vol. 6; Related Information: CNEEC partners with Stanford University (lead); Carnegie Institution at Stanford; Technical University of Denmark; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 74 works

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