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Point defect stability in a semicoherent metallic interface

Journal Article · · Physical Review. B, Condensed Matter and Materials Physics
 [1];  [1];  [2]
  1. Univ. of Oviedo (Spain)
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Here, we introduce a comprehensive density functional theory (DFT) -based study of different aspects of one vacancy and He impurity atom behavior at semicoherent interfaces between the low-solubility transition metals Cu and Nb. Such interfaces have not been previously modeled using DFT. A thorough analysis of the stability and mobility of the two types of defects at the interfaces and neighboring internal layers has been performed and the results have been compared to the equivalent cases in the pure metallic matrices. The different behavior of fcc and bcc metals on both sides of the interface has been specifically assessed. The modeling effort undertaken is the initial attempt to study the stability and defect energetics of noncoherent Cu/Nb interfaces from first principles, in order to assess their potential use in radiation-resistant materials.

Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Center for Materials at Irradiation and Mechanical Extremes (CMIME); Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE SC Office of Basic Energy Sciences (SC-22)
OSTI ID:
1369967
Alternate ID(s):
OSTI ID: 1179934
Journal Information:
Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 6 Vol. 91; ISSN 1098-0121; ISSN PRBMDO
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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Cited By (1)

Vacancy assisted He-interstitial clustering and their elemental interaction at fcc-bcc semicoherent metallic interface journal March 2018

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