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Title: Form of silicon and method of making the same

Abstract

The invention relates to a new phase of silicon, Si.sub.24, and a method of making the same. Si.sub.24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na.sub.4Si.sub.24 and a method of making the same. N.sub.a4Si.sub.24 may be used as a precursor to make Si.sub.24.

Inventors:
; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers
Sponsoring Org.:
USDOE
OSTI Identifier:
1368215
Patent Number(s):
9,695,051
Application Number:
14/903,131
Assignee:
CARNEGIE INSTITUTION OF WASHINGTON EFRC
DOE Contract Number:
SC0001057
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Jul 08
Country of Publication:
United States
Language:
English

Citation Formats

Strobel, Timothy A., Kim, Duck Young, and Kurakevych, Oleksandr O. Form of silicon and method of making the same. United States: N. p., 2017. Web.
Strobel, Timothy A., Kim, Duck Young, & Kurakevych, Oleksandr O. Form of silicon and method of making the same. United States.
Strobel, Timothy A., Kim, Duck Young, and Kurakevych, Oleksandr O. Tue . "Form of silicon and method of making the same". United States. doi:. https://www.osti.gov/servlets/purl/1368215.
@article{osti_1368215,
title = {Form of silicon and method of making the same},
author = {Strobel, Timothy A. and Kim, Duck Young and Kurakevych, Oleksandr O.},
abstractNote = {The invention relates to a new phase of silicon, Si.sub.24, and a method of making the same. Si.sub.24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na.sub.4Si.sub.24 and a method of making the same. N.sub.a4Si.sub.24 may be used as a precursor to make Si.sub.24.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 04 00:00:00 EDT 2017},
month = {Tue Jul 04 00:00:00 EDT 2017}
}

Patent:

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