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Title: Form of silicon and method of making the same

Patent ·
OSTI ID:1368215

The invention relates to a new phase of silicon, Si.sub.24, and a method of making the same. Si.sub.24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na.sub.4Si.sub.24 and a method of making the same. N.sub.a4Si.sub.24 may be used as a precursor to make Si.sub.24.

Research Organization:
Energy Frontier Research Centers (EFRC) (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
SC0001057
Assignee:
CARNEGIE INSTITUTION OF WASHINGTON
Patent Number(s):
9,695,051
Application Number:
14/903,131
OSTI ID:
1368215
Resource Relation:
Patent File Date: 2014 Jul 08
Country of Publication:
United States
Language:
English

References (7)

Clathrate compounds and processes for production thereof patent September 1998
Clathrate compounds and manufacturing method thereof patent October 2002
Nanostructured materials for hydrogen storage patent December 2007
Clathrate Compounds and Methods Of Manufacturing patent-application October 2009
Clathrate Allotropes For Rechargeable Batteries patent-application November 2012
Na-Si Clathrates Are High-Pressure Phases: A Melt-Based Route to Control Stoichiometry and Properties journal December 2012
Influence of the special features of atomic structure of Si24 and MeSi24 (Me = Na or K) nanoparticles on their electron properties journal February 2006

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