Form of silicon and method of making the same
Patent
·
OSTI ID:1368215
The invention relates to a new phase of silicon, Si.sub.24, and a method of making the same. Si.sub.24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na.sub.4Si.sub.24 and a method of making the same. N.sub.a4Si.sub.24 may be used as a precursor to make Si.sub.24.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- SC0001057
- Assignee:
- CARNEGIE INSTITUTION OF WASHINGTON
- Patent Number(s):
- 9,695,051
- Application Number:
- 14/903,131
- OSTI ID:
- 1368215
- Resource Relation:
- Patent File Date: 2014 Jul 08
- Country of Publication:
- United States
- Language:
- English
Similar Records
Form of silicon and method of making the same
Advanced Synthesis of Na4Si24
Laminated metal composite formed from low flow stress layers and high flow stress layers using flow constraining elements and method of making same
Patent
·
Tue Jan 15 00:00:00 EST 2019
·
OSTI ID:1368215
Advanced Synthesis of Na4Si24
Journal Article
·
Mon Jan 01 00:00:00 EST 2018
· MRS Advances
·
OSTI ID:1368215
+5 more
Laminated metal composite formed from low flow stress layers and high flow stress layers using flow constraining elements and method of making same
Patent Application
·
Sat Dec 31 00:00:00 EST 1994
·
OSTI ID:1368215