Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method

Kivambe, Maulid; Powell, Douglas M.; Castellanos, Sergio; Ann Jensen, Mallory; Morishige, Ashley E.; Nakajima, Kazuo; Morishita, Kohei; Murai, Ryota; Buonassisi, Tonio

doi:10.1016/j.jcrysgro.2014.08.021

Title: Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method

Journal Article · Mon Dec 01 00:00:00 EST 2014 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2014.08.021· OSTI ID:1367763

Kivambe, Maulid; Powell, Douglas M.; Castellanos, Sergio; Ann Jensen, Mallory; Morishige, Ashley E.; Nakajima, Kazuo; Morishita, Kohei; Murai, Ryota; Buonassisi, Tonio

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Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: EEC-1041895; AC02-06CH11357

OSTI ID:: 1367763

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 407 Journal Issue: C; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: Netherlands

Language:: English

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Cited by: 22 works

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References (42)

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