Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Scanning Capacitance Microscopy Imaging and Registration of 2-D Donor Devices Fabricated via Scanning Tunneling Microscopy.

Conference ·
OSTI ID:1367647
Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1367647
Report Number(s):
SAND2014-19554C; 642788
Country of Publication:
United States
Language:
English

Similar Records

Scanning Capacitance Microscopy Imaging and Registration of 2-D Donor Devices Fabricated via Scanning Tunneling Microscopy.
Conference · Tue Apr 01 00:00:00 EDT 2014 · OSTI ID:1142605

Donor charge qubits via scanning tunneling microscopy (STM) assisted fabrication.
Conference · Mon Apr 01 00:00:00 EDT 2013 · OSTI ID:1296708

Scanning capacitance microscopy of atomic precision donor devices in Si.
Conference · Fri Feb 28 23:00:00 EST 2014 · OSTI ID:1141175

Related Subjects