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High fidelity polycrystalline CdTe/CdS heterostructures via molecular dynamics

Journal Article · · MRS Advances
DOI:https://doi.org/10.1557/adv.2017.440· OSTI ID:1367348
 [1];  [2];  [2];  [1]
  1. The Univ. of Texas at El Paso, El Paso, TX (United States)
  2. Sandia National Lab. (SNL-CA), Livermore, CA (United States)

Molecular dynamics simulations of polycrystalline growth of CdTe/CdS heterostructures have been performed. First, CdS was deposited on an amorphous CdS substrate, forming a polycrystalline film. Subsequently, CdTe was deposited on top of the polycrystalline CdS film. Cross-sectional images show grain formation at early stages of the CdS growth. During CdTe deposition, the CdS structure remains almost unchanged. Concurrently, CdTe grain boundary motion was detected after the first 24.4 nanoseconds of CdTe deposition. With the elapse of time, this grain boundary pins along the CdS/CdTe interface, leaving only a small region of epitaxial growth. CdTe grains are larger than CdS grains in agreement with experimental observations in the literature. Crystal phase analysis shows that zinc blende structure dominates over the wurtzite structure inside both CdS and CdTe grains. Composition analysis shows Te and S diffusion to the CdS and CdTe films, respectively. Lastly, these simulated results may stimulate new ideas for studying and improving CdTe solar cell efficiency.

Research Organization:
Sandia National Laboratories (SNL-CA), Livermore, CA (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)
Grant/Contract Number:
AC04-94AL85000; EE0005958; NA0003525
OSTI ID:
1367348
Report Number(s):
SAND--2017-5315J; 653433
Journal Information:
MRS Advances, Journal Name: MRS Advances Journal Issue: 53 Vol. 2; ISSN 2059-8521; ISSN applab
Publisher:
Materials Research Society (MRS)Copyright Statement
Country of Publication:
United States
Language:
English

References (12)

Fast Parallel Algorithms for Short-Range Molecular Dynamics journal March 1995
Calculation of surface diffusivity and residence time by molecular dynamics with application to nanoscale selective-area growth journal August 2015
Atomic and electronic structure of Lomer dislocations at CdTe bicrystal interface journal June 2016
Deep-level impurities in CdTe/CdS thin-film solar cells journal December 2000
Direct observation of electrical properties of grain boundaries in sputter-deposited CdTe using scan-probe microwave reflectivity based capacitance measurements journal October 2015
Understanding misfit strain releasing mechanisms via molecular dynamics simulations of CdTe growth on {112}zinc-blende CdS journal July 2016
Visualization and analysis of atomistic simulation data with OVITO–the Open Visualization Tool journal December 2009
Erratum: Computer simulation of local order in condensed phases of silicon [Phys. Rev. B 31, 5262 (1985)] journal January 1986
Stillinger-Weber potential for the II-VI elements Zn-Cd-Hg-S-Se-Te journal August 2013
Carrier Separation at Dislocation Pairs in CdTe journal August 2013
Grain-Boundary-Enhanced Carrier Collection in CdTe Solar Cells journal April 2014
POLYCRYSTALLINE THIN FILM SOLAR CELLS:Present Status and Future Potential journal August 1997

Cited By (1)

Molecular Dynamics Calculations of Grain Boundary Mobility in CdTe journal April 2019

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