Sn2Se3: A conducting crystalline mixed valent phase change memory compound

Xing, Guangzong; Li, Yuwei; Fan, Xiaofeng; Zhang, Lijun; Zheng, Weitao; Singh, David J.

doi:10.1063/1.4985247

Title: Sn₂Se₃: A conducting crystalline mixed valent phase change memory compound

Journal Article · Fri Jun 09 00:00:00 EDT 2017 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4985247· OSTI ID:1473914

Xing, Guangzong ^[1]; Li, Yuwei ^[2];

^[3]; Zhang, Lijun ^[3]; Zheng, Weitao ^[3];

^[2]

Jilin Univ., Changchun (China). College of Materials Science and Engineering. Key Lab. of Automobile Materials of MOE; Univ. of Missouri, Columbia, MO (United States). Dept. of Physics and Astronomy
Univ. of Missouri, Columbia, MO (United States). Dept. of Physics and Astronomy
Jilin Univ., Changchun (China). College of Materials Science and Engineering. Key Lab. of Automobile Materials of MOE

Thin film Sn₂Se₃ is a promising new phase change memory material with a very high resistance contrast between insulating amorphous and conducting crystalline phases. In this paper, we identify the structure of the Sn₂Se₃ crystalline phase using ab initio evolutionary structure search and report its properties. We find a structure based on Sn-Se ribbons with clear disproportionation of Sn into Sn(II) and Sn(IV) sites, similar to Sn₂S₃. The energy is only 9 meV/atom above the tie line between SnSe and SnSe₂. Sn charge disproportionation is only marginally favored in this selenide, in contrast to sulfides. This leads to a semimetallic rather than semiconducting behavior. Finally, these findings, marginal stability of the crystalline phase and conducting character and close competition of disproportionated and non-disproportionated structures, are important for understanding the behavior of Sn₂Se₃ as a phase change memory material, specifically the fast low energy, the low temperature switching, and the high resistance contrast.

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Research Organization:: Univ. of Missouri, Columbia, MO (United States); Jilin Univ., Changchun (China)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); China Scholarship Council (CSC)

Grant/Contract Number:: SC0014607

OSTI ID:: 1473914

Alternate ID(s):: OSTI ID: 1366566

Journal Information:: Journal of Applied Physics, Vol. 121, Issue 22; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 9 works

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