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Title: Sn 2 Se 3 : A conducting crystalline mixed valent phase change memory compound

Authors:
 [1];  [2]; ORCiD logo [3];  [3];  [3]; ORCiD logo [2]
  1. College of Materials Science and Engineering and Key Laboratory of Automobile Materials of MOE, Jilin University, Changchun 130012, China, Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211-7010, USA
  2. Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211-7010, USA
  3. College of Materials Science and Engineering and Key Laboratory of Automobile Materials of MOE, Jilin University, Changchun 130012, China
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1366566
Grant/Contract Number:
SC0014607
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 121; Journal Issue: 22; Related Information: CHORUS Timestamp: 2018-02-14 11:20:01; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Xing, Guangzong, Li, Yuwei, Fan, Xiaofeng, Zhang, Lijun, Zheng, Weitao, and Singh, David J. Sn 2 Se 3 : A conducting crystalline mixed valent phase change memory compound. United States: N. p., 2017. Web. doi:10.1063/1.4985247.
Xing, Guangzong, Li, Yuwei, Fan, Xiaofeng, Zhang, Lijun, Zheng, Weitao, & Singh, David J. Sn 2 Se 3 : A conducting crystalline mixed valent phase change memory compound. United States. doi:10.1063/1.4985247.
Xing, Guangzong, Li, Yuwei, Fan, Xiaofeng, Zhang, Lijun, Zheng, Weitao, and Singh, David J. Wed . "Sn 2 Se 3 : A conducting crystalline mixed valent phase change memory compound". United States. doi:10.1063/1.4985247.
@article{osti_1366566,
title = {Sn 2 Se 3 : A conducting crystalline mixed valent phase change memory compound},
author = {Xing, Guangzong and Li, Yuwei and Fan, Xiaofeng and Zhang, Lijun and Zheng, Weitao and Singh, David J.},
abstractNote = {},
doi = {10.1063/1.4985247},
journal = {Journal of Applied Physics},
number = 22,
volume = 121,
place = {United States},
year = {Wed Jun 14 00:00:00 EDT 2017},
month = {Wed Jun 14 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on June 9, 2018
Publisher's Accepted Manuscript

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  • Using single crystalline In2Se3 nanowires as a platform, we have studied the RESET switching (from low to high electrical resistance) in this phase-change material under electric pulses. Particularly, we correlated the atomic-scale structural evolutions with local electrical resistance variations, by performing transmission electron microscopy and scanning Kelvin probe microscopy on the same nanowires. By coupling the experimental results with density functional theory calculations, we show that the immobile dislocations generated via vacancy condensations are responsible for the RESET switching and that the material maintains the single crystallinity during the process. This new mechanism is fundamentally different from the crystalline-amorphous transition,more » which is commonly understood as the underlying process for the RESET switching in similar phase-change materials.« less
  • The decomposition of In{sub 2}Se{sub 3} nanowire phase change memory devices during current-driving operation was investigated. The devices were subjected to thermal/electrical stress with current density and electric field during the reset operation at 0.24–0.38 MA/cm{sup 2} and 5.3–6.4 kV/cm, respectively. After multiple operation cycles, a change in morphology and composition of the In{sub 2}Se{sub 3} nanowire was observed and led to the device failure. The transmission electron microscopy and energy dispersive analysis indicate that electromigration causes the catastrophic failure by void formation where In atoms migrate toward the cathode and Se atoms migrate toward the anode depending on their electronegativities.
  • The quasi-ternary system Ag{sub 2}Se–Ga{sub 2}Se{sub 3}–In{sub 2}Se{sub 3} was investigated by differential thermal, X-ray phase, X-ray structure, microstructure analysis and microhardness measurements. Five quasi-binary phase diagrams, six polythermal sections, isothermal section at 820 K and the liquidus surface projection were constructed. The character and temperature of the invariant processes were determined. The specific resistance of the single crystals (Ga{sub 0.6}In{sub 0.4}){sub 2}Se{sub 3}, (Ga{sub 0.594}In{sub 0.396}Er{sub 0.01}){sub 2}Se{sub 3} was measured, 7.5×10{sup 5} and 3.15×10{sup 5} Ω m, respectively, optical absorption spectra in the 600–1050 nm range were recorded at room temperature, and the band gap energy was estimatedmore » which is 1.95±0. 01 eV for both samples. - Graphical abstract: The article reports for the first time the investigated liquidus surface projection of the Ag{sub 2}Se–Ga{sub 2}Se{sub 3}–In{sub 2}Se{sub 3} system and isothermal section at 820 K of the system. Five phase diagrams, six polythermal sections, isothermal section at 820 K and the liquidus surface projection were built at the first time. The existence of the large region of the solid solutions based on AgIn{sub 5}Se{sub 8}, Ga{sub 2}Se{sub 3} and AgGa{sub 1−x}In{sub x}Se{sub 2} was investigated. The existence of two ternary phases was established in the Ga{sub 2}Se{sub 3}–In{sub 2}Se{sub 3} system. Two single crystals (Ga{sub 0.6}In{sub 0.4}){sub 2}Se{sub 3}, (Ga{sub 0.594}In{sub 0.396}Er{sub 0.01}){sub 2}Se{sub 3} were grown and some of optical properties of them were studied at first time. Display Omitted - Highlights: • Liquidus surface projection was built for Ag{sub 2}Se–Ga{sub 2}Se{sub 3}–In{sub 2}Se{sub 3} system. • Solid solution ranges of AgIn{sub 5}Se{sub 8}, Ga{sub 2}Se{sub 3} and AgGa{sub 1−x}In{sub x}Se{sub 2} were investigated. • Two single crystals (Ga{sub 0.6}In{sub 0.4}){sub 2}Se{sub 3}, (Ga{sub 0.594}In{sub 0.396}Er{sub 0.01}){sub 2}Se{sub 3} were grown. • Some optical properties of these single crystals were studied.« less
  • We report the characterization of the misfit compound (Pb 1-xSn xSe 2)1.16(TiSe 2) 2 for 0 ≤ x ≤ 0.6, in which a [100] rocksalt-structure bilayer of Pb1-xSnxSe, which is a topological crystalline insulator in bulk form, alternates with a double layer of the normally nonsuperconducting transition metal dichalcogenide TiSe 2. The x dependence of Tc displays a weak dome-like shape with a maximum Tc of 4.5 K at x = 0.2; there is only a subtle change in Tc at the composition where the trivial to topological transition occurs in bulk Pb1-xSnxSe. We present the characterization of the superconductormore » at x = 0.4, for which the bulk Pb1-xSnxSe phase is in the topological crystalline insulator regime. For this material, the Sommerfeld parameter γ = 11.06 mJ mol -1 K -2, the Debye temperature Θ D = 161 K, the normalized specific heat jump value ΔC/γT c = 1.38 and the electron-phonon constant value γ ep = 0.72, suggesting that (Pb 0.6Sn 0.4Se) 1.16(TiSe 2) 2 is a BCS-type weak coupling superconductor. This material may be of interest for probing the interaction of superconductivity with the surface states of a topological crystalline insulator.« less
  • The reaction of InCl[sub 3] with Na[sub 2]Se[sub 5] in dimethylformamide (DMF) in the presence of Ph[sub 4]PCl gave (Ph[sub 4]P)[sub 4][In[sub 2](Se[sub 4])[sub 4](Se[sub 5])] (I) in 75% yield. Under the same conditions, InCl[sub 3] reacted with Na[sub 2]Se[sub 5] in the presence of Pr[sub 4]NBr or Et[sub 4]NBr and afforded (Pr[sub 4]N)[sub 4][In[sub 2](Se[sub 4])[sub 4](Se[sub 5])] (II) in 65% yield and (Et[sub 4]N)[sub 4][In[sub 2](Se[sub 4])[sub 4](Se[sub 5])] (III) in 72% yield, respectively. Single-crystal X-ray diffraction studies show that (I), (II), and (III) contain the same anion, [In[sub 2](Se[sub 4])[sub 4](Se[sub 5])][sup 4[minus]]. The anion consists ofmore » In[sup 3+] centers in trigonal bipyramidal coordination; each In atom is chelated by two bidentate Se[sub 4][sup 2[minus]] ligands forming a [In(Se[sub 4])[sub 2]][sup [minus]] unit. Two of these [In(Se[sub 4])[sub 2]][sup [minus]] units are bridged by an Se[sub 5][sup 2[minus]] chain forming a dimer. The hydrothermal reaction of InCl[sub 3] with Na[sub 2]Se[sub 4] in the presence of Pr[sub 4]NBr and water at 110[degrees]C for 3 days in an evacuated sealed Pyrex tube afforded deep red crystals of (Pr[sub 4]N)[sub 2][In[sub 2]Se[sub 2](Se[sub 4])[sub 2]] (IV), in 80% yield. Under the same conditions the reaction with [(Ph[sub 3]P)[sub 2]N]Cl yields [(Ph[sub 3]P)[sub 2]N][sub 2][In[sub 2]Se[sub 2](Se[sub 4])[sub 2]] (V) in 60% yield. Single-crystal X-ray diffraction studies show that (IV) and (V) contain the same binuclear anion [In[sub 2]Se[sub 2](Se[sub 4])[sub 2]][sup 2[minus]]. The reaction of InCl[sub 3] with Na[sub 2]Se[sub 5] in 1:2 mole ratio in acetonitrile in the presence of Et[sub 4]NBr afforded (Et[sub 4]N)[sub 3][In[sub 3]Se[sub 3](Se[sub 4])[sub 3]] (VI). Similar reaction of TlCl with Na[sub 2]Se[sub 5] in 1:2 mole ratio in DMF in the presence of Et[sub 4]NBr gave (Et[sub 4]N)[sub 3][Tl[sub 3]Se[sub 3](Se[sub 4])[sub 3]] (VII). 57 refs., 13 figs., 14 tabs.« less