A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing

van de Burgt, Yoeri; Lubberman, Ewout; Fuller, Elliot J.; Keene, Scott T.; Faria, Gregorio C.; Agarwal, Sapan; Marinella, Matthew J.; Alec Talin, A.; Salleo, Alberto

doi:10.1038/nmat4856

A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing

Journal Article · Sun Feb 19 23:00:00 EST 2017 · Nature Materials

DOI:https://doi.org/10.1038/nmat4856· OSTI ID:1365809

^[1]; Lubberman, Ewout ^[2]; Fuller, Elliot J. ^[3]; Keene, Scott T. ^[1]; Faria, Gregorio C. ^[4]; Agarwal, Sapan ^[3]; Marinella, Matthew J. ^[5]; Alec Talin, A. ^[3]; Salleo, Alberto ^[1]

Stanford Univ., CA (United States)
Stanford Univ., CA (United States); Univ. of Groningen (Netherlands)
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Stanford Univ., CA (United States); Univ. of Sao Paulo (Brazil)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

The brain is capable of massively parallel information processing while consuming only ~1- 100 fJ per synaptic event. Inspired by the efficiency of the brain, CMOS-based neural architectures and memristors are being developed for pattern recognition and machine learning. However, the volatility, design complexity and high supply voltages for CMOS architectures, and the stochastic and energy-costly switching of memristors complicate the path to achieve the interconnectivity, information density, and energy efficiency of the brain using either approach. Here we describe an electrochemical neuromorphic organic device (ENODe) operating with a fundamentally different mechanism from existing memristors. ENODe switches at low energy (<10 pJ for 10³ μm² devices) and voltage, displays >500 distinct, non-volatile conductance states within a ~1 V range, and achieves high classification accuracy when implemented in neural network simulations. Plastic ENODEs are also fabricated on flexible substrates enabling the integration of neuromorphic functionality in stretchable electronic systems. Mechanical flexibility makes ENODes compatible with 3D architectures, opening a path towards extreme interconnectivity comparable to the human brain.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1365809

Alternate ID(s):: OSTI ID: 1388582

Report Number(s):: SAND--2017-1662J; nmat4856

Journal Information:: Nature Materials, Journal Name: Nature Materials Journal Issue: 4 Vol. 16; ISSN 1476-1122

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Stretchable organic optoelectronic sensorimotor synapse Lee, Yeongjun; Oh, Jin Young; Xu, Wentao Science Advances, Vol. 4, Issue 11 https://doi.org/10.1126/sciadv.aat7387	journal	November 2018
Internal ion-gated organic electrochemical transistor: A building block for integrated bioelectronics Spyropoulos, George D.; Gelinas, Jennifer N.; Khodagholy, Dion Science Advances, Vol. 5, Issue 2 https://doi.org/10.1126/sciadv.aau7378	journal	February 2019
Simultaneous implementation of resistive switching and rectifying effects in a metal-organic framework with switched hydrogen bond pathway Yao, Zizhu; Pan, Liang; Liu, Lizhen Science Advances, Vol. 5, Issue 8 https://doi.org/10.1126/sciadv.aaw4515	journal	August 2019
Stretchable elastic synaptic transistors for neurologically integrated soft engineering systems Shim, Hyunseok; Sim, Kyoseung; Ershad, Faheem Science Advances, Vol. 5, Issue 10 https://doi.org/10.1126/sciadv.aax4961	journal	October 2019
A bioinspired flexible organic artificial afferent nerve Kim, Yeongin; Chortos, Alex; Xu, Wentao Science, Vol. 360, Issue 6392 https://doi.org/10.1126/science.aao0098	journal	May 2018
Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing Fuller, Elliot J.; Keene, Scott T.; Melianas, Armantas Science, Vol. 364, Issue 6440 https://doi.org/10.1126/science.aaw5581	journal	April 2019
Three Artificial Spintronic Leaky Integrate-and-Fire Neurons Brigner, Wesley H.; Hu, Xuan; Hassan, Naimul SPIN, Vol. 10, Issue 02 https://doi.org/10.1142/s2010324720400032	journal	June 2020
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High Performance Vertical Organic Electrochemical Transistors Malliaras, Georgios Apollo - University of Cambridge Repository https://doi.org/10.17863/cam.21501	text	January 2018
Organic Electrochemical Transistors Malliaras, George; Rivnay, J.; Inal, S. Apollo - University of Cambridge Repository https://doi.org/10.17863/cam.21503	text	January 2018
Functional Connectivity of Organic Neuromorphic Devices by Global Voltage Oscillations Koutsouras, Dimitrios A.; Prodromakis, Themis; Malliaras, George Apollo - University of Cambridge Repository https://doi.org/10.17863/cam.38885	text	January 2019
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Memristive and CMOS Devices for Neuromorphic Computing Milo, Valerio; Malavena, Gerardo; Monzio Compagnoni, Christian Materials, Vol. 13, Issue 1 https://doi.org/10.3390/ma13010166	journal	January 2020
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Nanosystems, Edge Computing, and the Next Generation Computing Systems Passian, Ali; Imam, Neena Sensors, Vol. 19, Issue 18 https://doi.org/10.3390/s19184048	journal	September 2019
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Long short-term memory networks in memristor crossbars Li, Can; Wang, Zhongrui; Rao, Mingyi arXiv https://doi.org/10.48550/arxiv.1805.11801	text	January 2018
Challenges in materials and devices for Resistive-Switching-based Neuromorphic Computing del Valle, Javier; Ramírez, Juan Gabriel; Rozenberg, Marcelo J. arXiv https://doi.org/10.48550/arxiv.1812.01120	text	January 2018

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